NTD65N03R Specs and Replacement
Type Designator: NTD65N03R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.6 nS
Cossⓘ - Output Capacitance: 555 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: DPAK
NTD65N03R substitution
NTD65N03R datasheet
ntd65n03r-035 ntd65n03r-1g ntd65n03r ntd65n03r-d.pdf
NTD65N03R Power MOSFET 25 V, 65 A, Single N-Channel, DPAK Features Low RDS(on) Ultra Low Gate Charge http //onsemi.com Low Reverse Recovery Charge Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Applications 6.5 mW @ 10 V 25 V 65 A Desktop CPU Power 9.7 mW @ 4.5 V DC-DC Converters High and Low Side Switch N-Channel D MAXIMUM RATINGS (TJ ... See More ⇒
Detailed specifications: NTD5865N-1G , NTD5867NL-1G , NTD60N02R , NTD60N02R-035 , NTD60N03-001 , NTD6414AN-1G , NTD6415AN-1G , NTD6416AN-1G , IRF640N , NTD65N03R-035 , NTD65N03R-1G , NTD6600N , NTD70N03R-001 , NTD70N03RG , NTD78N03 , NTD80N02 , NTD80N02-001 .
History: 8N60KL-TF1-T | KQB27P06
Keywords - NTD65N03R MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 8N60KL-TF1-T | KQB27P06
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