NTD65N03R MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD65N03R
Marking Code: 65N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12.2 nC
trⓘ - Rise Time: 18.6 nS
Cossⓘ - Output Capacitance: 555 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: DPAK
NTD65N03R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD65N03R Datasheet (PDF)
ntd65n03r-035 ntd65n03r-1g ntd65n03r ntd65n03r-d.pdf
NTD65N03RPower MOSFET25 V, 65 A, Single N-Channel, DPAKFeatures Low RDS(on) Ultra Low Gate Chargehttp://onsemi.com Low Reverse Recovery Charge Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXApplications6.5 mW @ 10 V25 V 65 A Desktop CPU Power9.7 mW @ 4.5 V DC-DC Converters High and Low Side SwitchN-ChannelDMAXIMUM RATINGS (TJ
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