NTD65N03R-1G PDF and Equivalents Search

 

NTD65N03R-1G Specs and Replacement

Type Designator: NTD65N03R-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.6 nS

Cossⓘ - Output Capacitance: 555 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: DPAK

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NTD65N03R-1G datasheet

 ..1. Size:73K  onsemi
 ntd65n03r-035 ntd65n03r-1g ntd65n03r ntd65n03r-d.pdf pdf_icon

NTD65N03R-1G

NTD65N03R Power MOSFET 25 V, 65 A, Single N-Channel, DPAK Features Low RDS(on) Ultra Low Gate Charge http //onsemi.com Low Reverse Recovery Charge Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Applications 6.5 mW @ 10 V 25 V 65 A Desktop CPU Power 9.7 mW @ 4.5 V DC-DC Converters High and Low Side Switch N-Channel D MAXIMUM RATINGS (TJ ... See More ⇒

Detailed specifications: NTD60N02R, NTD60N02R-035, NTD60N03-001, NTD6414AN-1G, NTD6415AN-1G, NTD6416AN-1G, NTD65N03R, NTD65N03R-035, AO3400, NTD6600N, NTD70N03R-001, NTD70N03RG, NTD78N03, NTD80N02, NTD80N02-001, NTD80N02-1G, NTD80N02G

Keywords - NTD65N03R-1G MOSFET specs

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