NTD6600N MOSFET Datasheet: N-Ch, 100V, 12A. Full specification with pinout and replacement list

NTD6600N Specs and Replacement

Type Designator: NTD6600N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm

Package: DPAK

NTD6600N substitution

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NTD6600N datasheet

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NTD6600N Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK Features Source-to-Drain Diode Recovery Time Comparable to a http //onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified V(BR)DSS RDS(on) TYP ID MAX Logic Level 100 V 118 mW @ 5.0 V 12 A Pb-Free Packages are Available Typical Applications N-Channel PWM Motor Controls D Power Su... See More ⇒

Detailed specifications: NTD60N02R-035, NTD60N03-001, NTD6414AN-1G, NTD6415AN-1G, NTD6416AN-1G, NTD65N03R, NTD65N03R-035, NTD65N03R-1G, IRFB4227, NTD70N03R-001, NTD70N03RG, NTD78N03, NTD80N02, NTD80N02-001, NTD80N02-1G, NTD80N02G, NTD80N02T4