All MOSFET. NTD6600N Datasheet

 

NTD6600N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD6600N
   Marking Code: NT6600
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.3 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm
   Package: DPAK

 NTD6600N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD6600N Datasheet (PDF)

 ..1. Size:64K  onsemi
 ntd6600n-d ntd6600n.pdf

NTD6600N NTD6600N

NTD6600NPower MOSFET100 V, 12 A, N-Channel,Logic Level DPAKFeatures Source-to-Drain Diode Recovery Time Comparable to a http://onsemi.comDiscrete Fast Recovery Diode Avalanche Energy SpecifiedV(BR)DSS RDS(on) TYP ID MAX Logic Level100 V 118 mW @ 5.0 V 12 A Pb-Free Packages are AvailableTypical ApplicationsN-Channel PWM Motor ControlsD Power Su

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top