All MOSFET. NTD6600N Datasheet

 

NTD6600N Datasheet and Replacement


   Type Designator: NTD6600N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm
   Package: DPAK
 

 NTD6600N substitution

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NTD6600N Datasheet (PDF)

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NTD6600N

NTD6600NPower MOSFET100 V, 12 A, N-Channel,Logic Level DPAKFeatures Source-to-Drain Diode Recovery Time Comparable to a http://onsemi.comDiscrete Fast Recovery Diode Avalanche Energy SpecifiedV(BR)DSS RDS(on) TYP ID MAX Logic Level100 V 118 mW @ 5.0 V 12 A Pb-Free Packages are AvailableTypical ApplicationsN-Channel PWM Motor ControlsD Power Su

Datasheet: NTD60N02R-035 , NTD60N03-001 , NTD6414AN-1G , NTD6415AN-1G , NTD6416AN-1G , NTD65N03R , NTD65N03R-035 , NTD65N03R-1G , IRFB4227 , NTD70N03R-001 , NTD70N03RG , NTD78N03 , NTD80N02 , NTD80N02-001 , NTD80N02-1G , NTD80N02G , NTD80N02T4 .

History: RDD023N50 | MS8N50

Keywords - NTD6600N MOSFET datasheet

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