All MOSFET. NTD78N03 Datasheet

 

NTD78N03 Datasheet and Replacement


   Type Designator: NTD78N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DPAK
 

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NTD78N03 Datasheet (PDF)

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NTD78N03

NTD78N03Power MOSFET25 V, 78 A, Single N-Channel, DPAKFeatures Low RDS(on) Optimized Gate Chargehttp://onsemi.com Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXApplications4.6 @ 10 V25 V 78 A Desktop VCORE6.5 @ 4.5 V DC-DC Converters Low Side SwitchDMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitN-

 0.1. Size:209K  onsemi
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NTD78N03

NTD78N03RPower MOSFET25 V, 85 A, Single N-Channel, DPAKFeatures Low RDS(on) to Minimize Conduction Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Pb-Free Packages are AvailableApplicationsV(BR)DSS RDS(on) TYP ID MAX VCORE Applications5.0 @ 11.5 V25 V 85 A DC-DC Converters7.5 @ 4.5 V Optimized for Low Side SwitchingD

Datasheet: NTD6415AN-1G , NTD6416AN-1G , NTD65N03R , NTD65N03R-035 , NTD65N03R-1G , NTD6600N , NTD70N03R-001 , NTD70N03RG , IRFB4110 , NTD80N02 , NTD80N02-001 , NTD80N02-1G , NTD80N02G , NTD80N02T4 , NTD85N02R , NTD85N02R-001 , NTD85N02R-1G .

History: S70N08ZS | 2SK3322-S

Keywords - NTD78N03 MOSFET datasheet

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