All MOSFET. NTD85N02R Datasheet

 

NTD85N02R MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD85N02R
   Marking Code: 85N02R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.7 nC
   trⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 871 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DPAK

 NTD85N02R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD85N02R Datasheet (PDF)

 ..1. Size:83K  onsemi
 ntd85n02r.pdf

NTD85N02R NTD85N02R

NTD85N02RPower MOSFET85 Amps, 24 VoltsN-Channel DPAKFeatureshttp://onsemi.com Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance VDSS RDS(ON) TYP ID MAX Low RDS(on) to Minimize Conduction Loss24 V4.8 mW85 A Low Ciss to Minimize Driver Loss Low Gate ChargeN-ChannelDMAXIMUM RATINGS (TJ = 25C Unless otherwise specified

 ..2. Size:76K  onsemi
 ntd85n02r-001 ntd85n02r-1g ntd85n02r ntd85n02rt4 ntd85n02r-d.pdf

NTD85N02R NTD85N02R

NTD85N02RPower MOSFET24 Volts, 85 AmpsSingle N-Channel,DPAK/IPAKhttp://onsemi.comFeatures Planar HD3e Process for Fast Switching PerformanceV(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses24 V 5.2 mW @ 10 V 85 A Low Gate Charge to Minimize Switching Losses Pb-Free Packages are AvailableN-Ch

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