NTD85N02R Specs and Replacement
Type Designator: NTD85N02R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 871 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DPAK
NTD85N02R substitution
- MOSFET ⓘ Cross-Reference Search
NTD85N02R datasheet
ntd85n02r.pdf
NTD85N02R Power MOSFET 85 Amps, 24 Volts N-Channel DPAK Features http //onsemi.com Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance VDSS RDS(ON) TYP ID MAX Low RDS(on) to Minimize Conduction Loss 24 V 4.8 mW 85 A Low Ciss to Minimize Driver Loss Low Gate Charge N-Channel D MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified... See More ⇒
ntd85n02r-001 ntd85n02r-1g ntd85n02r ntd85n02rt4 ntd85n02r-d.pdf
NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N-Channel, DPAK/IPAK http //onsemi.com Features Planar HD3e Process for Fast Switching Performance V(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 24 V 5.2 mW @ 10 V 85 A Low Gate Charge to Minimize Switching Losses Pb-Free Packages are Available N-Ch... See More ⇒
Detailed specifications: NTD70N03R-001, NTD70N03RG, NTD78N03, NTD80N02, NTD80N02-001, NTD80N02-1G, NTD80N02G, NTD80N02T4, IRFP250N, NTD85N02R-001, NTD85N02R-1G, NTD85N02RT4, NTD95N02R, NTD95N02R-1G, NTD95N02RT4, NTDV18N06LT4G, NTDV20N06
Keywords - NTD85N02R MOSFET specs
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History: ME2309
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