NTD85N02R Datasheet and Replacement
Type Designator: NTD85N02R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 78.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 871 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DPAK
NTD85N02R substitution
NTD85N02R Datasheet (PDF)
ntd85n02r.pdf

NTD85N02RPower MOSFET85 Amps, 24 VoltsN-Channel DPAKFeatureshttp://onsemi.com Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance VDSS RDS(ON) TYP ID MAX Low RDS(on) to Minimize Conduction Loss24 V4.8 mW85 A Low Ciss to Minimize Driver Loss Low Gate ChargeN-ChannelDMAXIMUM RATINGS (TJ = 25C Unless otherwise specified
ntd85n02r-001 ntd85n02r-1g ntd85n02r ntd85n02rt4 ntd85n02r-d.pdf

NTD85N02RPower MOSFET24 Volts, 85 AmpsSingle N-Channel,DPAK/IPAKhttp://onsemi.comFeatures Planar HD3e Process for Fast Switching PerformanceV(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses24 V 5.2 mW @ 10 V 85 A Low Gate Charge to Minimize Switching Losses Pb-Free Packages are AvailableN-Ch
Datasheet: NTD70N03R-001 , NTD70N03RG , NTD78N03 , NTD80N02 , NTD80N02-001 , NTD80N02-1G , NTD80N02G , NTD80N02T4 , AON7408 , NTD85N02R-001 , NTD85N02R-1G , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , NTD95N02RT4 , NTDV18N06LT4G , NTDV20N06 .
History: APT5016BFLLG | 5N90 | GSM8452 | WMK12N80M3 | AOD423 | AOD4286 | SGSP461
Keywords - NTD85N02R MOSFET datasheet
NTD85N02R cross reference
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History: APT5016BFLLG | 5N90 | GSM8452 | WMK12N80M3 | AOD423 | AOD4286 | SGSP461



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