NTD95N02R-1G PDF and Equivalents Search

 

NTD95N02R-1G Specs and Replacement

Type Designator: NTD95N02R-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 1020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DPAK

NTD95N02R-1G substitution

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NTD95N02R-1G datasheet

 ..1. Size:66K  onsemi
 ntd95n02r-1g ntd95n02r ntd95n02rt4 ntd95n02r-d.pdf pdf_icon

NTD95N02R-1G

NTD95N02R Power MOSFET 95 Amps, 24 Volts N-Channel DPAK Features http //onsemi.com High Power and Current Handling Capability V(BR)DSS RDS(ON) TYP ID MAX* Fast Switching Performance 4.5 mW @ 10 V Low RDS(on) to Minimize Conduction Loss 24 V 95 A 5.9 mW @ 4.5 V Low Gate Charge to Minimize Switching Losses *ID MAX in the product summary table is continuous Pb-Fr... See More ⇒

Detailed specifications: NTD80N02-1G, NTD80N02G, NTD80N02T4, NTD85N02R, NTD85N02R-001, NTD85N02R-1G, NTD85N02RT4, NTD95N02R, STP75NF75, NTD95N02RT4, NTDV18N06LT4G, NTDV20N06, NTDV20N06L, NTDV20P06L, NTDV3055L104, NTDV5804N, NTF2955PT1G

Keywords - NTD95N02R-1G MOSFET specs

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