NTD95N02R-1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD95N02R-1G
Marking Code: T95N02R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 1020 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DPAK
NTD95N02R-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD95N02R-1G Datasheet (PDF)
..1. Size:66K onsemi
ntd95n02r-1g ntd95n02r ntd95n02rt4 ntd95n02r-d.pdf
ntd95n02r-1g ntd95n02r ntd95n02rt4 ntd95n02r-d.pdf
NTD95N02RPower MOSFET95 Amps, 24 VoltsN-Channel DPAKFeatureshttp://onsemi.com High Power and Current Handling CapabilityV(BR)DSS RDS(ON) TYP ID MAX* Fast Switching Performance4.5 mW @ 10 V Low RDS(on) to Minimize Conduction Loss24 V 95 A5.9 mW @ 4.5 V Low Gate Charge to Minimize Switching Losses*ID MAX in the product summary table is continuous Pb-Fr
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