All MOSFET. NTDV5804N Datasheet

 

NTDV5804N MOSFET. Datasheet pdf. Equivalent

Type Designator: NTDV5804N

Marking Code: 5804N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 71 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 69 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 18.7 nS

Drain-Source Capacitance (Cd): 310 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: DPAK

NTDV5804N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTDV5804N Datasheet (PDF)

0.1. ntdv5804n.pdf Size:70K _onsemi

NTDV5804N
NTDV5804N

NTD5804N, NTDV5804N, SVD5804N Power MOSFET 40 V, 69 A, Single N-Channel, DPAK Features • Low RDS(on) www.onsemi.com • High Current Capability V(BR)DSS RDS(on) MAX ID MAX • Avalanche Energy Specified • NTDV and SVD Prefix for Automotive and Other Applications 12 mW @ 5.0 V 40 V 69 A Requiring Unique Site and Control Change Requirements; 7.5 mW @ 10 V AEC-Q101 Qualified and

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