All MOSFET. NTDV5804N Datasheet

 

NTDV5804N Datasheet and Replacement


   Type Designator: NTDV5804N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18.7 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DPAK
 

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NTDV5804N Datasheet (PDF)

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NTDV5804N

NTD5804N, NTDV5804N,SVD5804NPower MOSFET40 V, 69 A, Single N-Channel, DPAKFeatures Low RDS(on)www.onsemi.com High Current CapabilityV(BR)DSS RDS(on) MAX ID MAX Avalanche Energy Specified NTDV and SVD Prefix for Automotive and Other Applications 12 mW @ 5.0 V40 V69 ARequiring Unique Site and Control Change Requirements;7.5 mW @ 10 VAEC-Q101 Qualified and

Datasheet: NTD95N02R , NTD95N02R-1G , NTD95N02RT4 , NTDV18N06LT4G , NTDV20N06 , NTDV20N06L , NTDV20P06L , NTDV3055L104 , 8205A , NTF2955PT1G , NTF2955T1G , NTF3055-100T1 , NTF3055-160T1 , NTF3055-160T3LF , NTF3055L108T1G , NTF3055L175T1G , NTF5P03 .

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