BUK637-500B Datasheet and Replacement
Type Designator: BUK637-500B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3PN
BUK637-500B substitution
BUK637-500B Datasheet (PDF)
buk637-500b.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK637-500BFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Datasheet: 2SK2753 , 2SK3262 , 2SK428 , 30N50 , 80N06 , AM30N10 , AOD2144 , BUK437-500B , RFP50N06 , CSD30N30 , FCH067N65S3 , FCP067N65S3 , FCP099N65S3 , FCP190N65S3 , FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN .
History: JMH65R980ACFP | STB438A | BUK625R0-40C | ZXMP3A17DN8 | RTR025P02TL | C2T225
Keywords - BUK637-500B MOSFET datasheet
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History: JMH65R980ACFP | STB438A | BUK625R0-40C | ZXMP3A17DN8 | RTR025P02TL | C2T225
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