FCP067N65S3 Datasheet and Replacement
Type Designator: FCP067N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: TO220
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FCP067N65S3 Datasheet (PDF)
fcp067n65s3.pdf

FCP067N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 44 A, 67 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to
fcp067n65s3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP067N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesUPSPower supplySwitching applicationsABSOLUTE MAXIMUM RATIN
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FRK250R | 2SK4096LS | WML11N80M3 | LSG70R380GT | 3SK108R | VP0808 | UT8205A
Keywords - FCP067N65S3 MOSFET datasheet
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History: FRK250R | 2SK4096LS | WML11N80M3 | LSG70R380GT | 3SK108R | VP0808 | UT8205A



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