All MOSFET. FCP067N65S3 Datasheet

 

FCP067N65S3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCP067N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
   Package: TO220

 FCP067N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP067N65S3 Datasheet (PDF)

 ..1. Size:355K  onsemi
fcp067n65s3.pdf

FCP067N65S3 FCP067N65S3

FCP067N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 44 A, 67 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to

 ..2. Size:207K  inchange semiconductor
fcp067n65s3.pdf

FCP067N65S3 FCP067N65S3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP067N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesUPSPower supplySwitching applicationsABSOLUTE MAXIMUM RATIN

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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