FCP067N65S3 Specs and Replacement
Type Designator: FCP067N65S3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: TO220
FCP067N65S3 substitution
- MOSFET ⓘ Cross-Reference Search
FCP067N65S3 datasheet
fcp067n65s3.pdf
FCP067N65S3 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 44 A, 67 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to... See More ⇒
fcp067n65s3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP067N65S3 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages UPS Power supply Switching applications ABSOLUTE MAXIMUM RATIN... See More ⇒
Detailed specifications: 30N50, 80N06, AM30N10, AOD2144, BUK437-500B, BUK637-500B, CSD30N30, FCH067N65S3, 5N60, FCP099N65S3, FCP190N65S3, FCP290N80, FCPF125N65S3, FCPF400N80ZCN, FDD9407, FMP60N280S2HF, IPA032N06N3
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