All MOSFET. FCP067N65S3 Datasheet

 

FCP067N65S3 Datasheet and Replacement


   Type Designator: FCP067N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
   Package: TO220
 

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FCP067N65S3 Datasheet (PDF)

 ..1. Size:355K  onsemi
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FCP067N65S3

FCP067N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 44 A, 67 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to

 ..2. Size:207K  inchange semiconductor
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FCP067N65S3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP067N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesUPSPower supplySwitching applicationsABSOLUTE MAXIMUM RATIN

Datasheet: 30N50 , 80N06 , AM30N10 , AOD2144 , BUK437-500B , BUK637-500B , CSD30N30 , FCH067N65S3 , 13N50 , FCP099N65S3 , FCP190N65S3 , FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN , FDD9407 , FMP60N280S2HF , IPA032N06N3 .

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