FMP60N280S2HF Specs and Replacement
Type Designator: FMP60N280S2HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220
FMP60N280S2HF substitution
- MOSFET ⓘ Cross-Reference Search
FMP60N280S2HF datasheet
fmp60n280s2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMP60N280S2HF FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MA... See More ⇒
Detailed specifications: FCH067N65S3, FCP067N65S3, FCP099N65S3, FCP190N65S3, FCP290N80, FCPF125N65S3, FCPF400N80ZCN, FDD9407, IRF2807, IPA032N06N3, IPA041N04N, IPA057N06N3, IPA093N06N3, IPA60R120C7, IPA60R170CFD7, IPA60R1K0CE, IPA60R1K5CE
Keywords - FMP60N280S2HF MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: ZXMN6A11GTC
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