All MOSFET. IPA093N06N3 Datasheet

 

IPA093N06N3 Datasheet and Replacement


   Type Designator: IPA093N06N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: TO220F
 

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IPA093N06N3 Datasheet (PDF)

 ..1. Size:545K  infineon
 ipa093n06n3 rev20.pdf pdf_icon

IPA093N06N3

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 ..2. Size:201K  inchange semiconductor
 ipa093n06n3.pdf pdf_icon

IPA093N06N3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA093N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 0.1. Size:499K  infineon
 ipa093n06n3g.pdf pdf_icon

IPA093N06N3

Type IPA093N06N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 9.3 mW Optimized technology for DC/DC convertersID 43 A Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to J

Datasheet: FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN , FDD9407 , FMP60N280S2HF , IPA032N06N3 , IPA041N04N , IPA057N06N3 , 8N60 , IPA60R120C7 , IPA60R170CFD7 , IPA60R1K0CE , IPA60R1K5CE , IPA60R280CFD7 , IPA60R280P7 , IPA60R600P7 , IPA65R1K0CE .

History: AP4521GEH | AP4957GM | SUD50N025-06P

Keywords - IPA093N06N3 MOSFET datasheet

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