IPAN50R500CE MOSFET Datasheet: N-Ch, 500V, 11.1A. Full specification with pinout and replacement list

IPAN50R500CE Specs and Replacement

Type Designator: IPAN50R500CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO220F

IPAN50R500CE substitution

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IPAN50R500CE datasheet

..1. Size:744K infineon
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IPAN50R500CE MOSFET PG-TO 220 FP 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

..2. Size:202K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPAN50R500CE FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapt... See More ⇒

Detailed specifications: IPA60R170CFD7, IPA60R1K0CE, IPA60R1K5CE, IPA60R280CFD7, IPA60R280P7, IPA60R600P7, IPA65R1K0CE, IPA65R400CE, IRF830, IPAN60R800CE, IPB073N15N5, IPB090N06N3, IPB156N22NFD, IPB60R280P6, IPD30N03S2L, IPP60R060P7, IPP60R070CFD7