All MOSFET. IPAN50R500CE Datasheet

 

IPAN50R500CE Datasheet and Replacement


   Type Designator: IPAN50R500CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220F
 

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IPAN50R500CE Datasheet (PDF)

 ..1. Size:744K  infineon
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IPAN50R500CE

IPAN50R500CEMOSFETPG-TO 220 FP500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

 ..2. Size:202K  inchange semiconductor
 ipan50r500ce.pdf pdf_icon

IPAN50R500CE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPAN50R500CEFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapt

Datasheet: IPA60R170CFD7 , IPA60R1K0CE , IPA60R1K5CE , IPA60R280CFD7 , IPA60R280P7 , IPA60R600P7 , IPA65R1K0CE , IPA65R400CE , P0903BDG , IPAN60R800CE , IPB073N15N5 , IPB090N06N3 , IPB156N22NFD , IPB60R280P6 , IPD30N03S2L , IPP60R060P7 , IPP60R070CFD7 .

History: MTB02N03H8 | SSW65R090S2 | RDX080N50FU6 | AP2N1K2EN1 | 2SK3058-ZJ | SPP80N06S2L-09

Keywords - IPAN50R500CE MOSFET datasheet

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