MDE1932 Specs and Replacement
Type Designator: MDE1932
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 209 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1540 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO263
MDE1932 substitution
- MOSFET ⓘ Cross-Reference Search
MDE1932 datasheet
mde1932.pdf
MDE1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m Features General Description The MDE1991 uses advanced MagnaChip s MV MOSFET V = 80V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON) fast switching performance, and excellent quality. ... See More ⇒
mde1932.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDE1932 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM ... See More ⇒
mde1991rh.pdf
MDE1991 Single N-channel Trench MOSFET 100V, 120A, 4.4m Features General Description The MDE1991 uses advanced MagnaChip s MV MOSFET V = 100V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON) fast switching performance, and excellent quality. ... See More ⇒
Detailed specifications: IXFA20N85XHV, IXFA34N65X2, IXFH20N85X, IXFH30N85X, IXFP12N65X2M, IXFP22N65X2M, IXTP24N65X2M, IXFP34N65X2, 10N60, MDP10N055, MDP1921, MMD80R900P, MMF60R360QTH, MMF80R450PTH, MMF80R650PTH, MTP2N50, NTB082N65S3F
Keywords - MDE1932 MOSFET specs
MDE1932 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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