NTB082N65S3F PDF and Equivalents Search

 

NTB082N65S3F Specs and Replacement

Type Designator: NTB082N65S3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO263

NTB082N65S3F substitution

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NTB082N65S3F datasheet

 ..1. Size:302K  onsemi
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NTB082N65S3F

NTB082N65S3F Power MOSFET, N Channel, SUPERFET) III, FRFET), 650 V, 40 A, 82 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored to ... See More ⇒

 ..2. Size:234K  inchange semiconductor
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NTB082N65S3F

INCHANGE Semiconductor isc N-Channel MOSFET Transistor NTB082N65S3F DESCRIPTION Drain-source on-resistance RDS(on) 82m @10V Drain Source Voltage V = 650V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Industrial power supplies UPS ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL AR... See More ⇒

Detailed specifications: MDE1932, MDP10N055, MDP1921, MMD80R900P, MMF60R360QTH, MMF80R450PTH, MMF80R650PTH, MTP2N50, IRF630, NTE2393, NTP082N65S3F, NTPF082N65S3F, SIHA11N80E, SKS10N20, STP30NF10FP, SUD25N15-52-E3, SUP70040E

Keywords - NTB082N65S3F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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