NTB082N65S3F Datasheet and Replacement
Type Designator: NTB082N65S3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: TO263
NTB082N65S3F substitution
NTB082N65S3F Datasheet (PDF)
ntb082n65s3f.pdf
NTB082N65S3FPower MOSFET, NChannel,SUPERFET) III, FRFET),650 V, 40 A, 82 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to
ntb082n65s3f.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor NTB082N65S3FDESCRIPTIONDrain-source on-resistance: RDS(on) 82m@10VDrain Source Voltage: V = 650V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Industrial power suppliesUPSABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL AR
Datasheet: MDE1932 , MDP10N055 , MDP1921 , MMD80R900P , MMF60R360QTH , MMF80R450PTH , MMF80R650PTH , MTP2N50 , IRF630 , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , SKS10N20 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E .
History: ISC60NM60L | ISCNH060D
Keywords - NTB082N65S3F MOSFET datasheet
NTB082N65S3F cross reference
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NTB082N65S3F substitution
NTB082N65S3F replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: ISC60NM60L | ISCNH060D
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