All MOSFET. NTP082N65S3F Datasheet

 

NTP082N65S3F Datasheet and Replacement


   Type Designator: NTP082N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO220
 

 NTP082N65S3F substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTP082N65S3F Datasheet (PDF)

 ..1. Size:836K  onsemi
 ntp082n65s3f.pdf pdf_icon

NTP082N65S3F

www.onsemi.comNTP082N65S3FN-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 mFeatures Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)

 ..2. Size:206K  inchange semiconductor
 ntp082n65s3f.pdf pdf_icon

NTP082N65S3F

INCHANGE Semiconductorisc N-Channel MOSFET Transistor NTP082N65S3FFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesUPSPower supplySwitching applicationsABSOLUTE MAXIMUM RATI

Datasheet: MDP1921 , MMD80R900P , MMF60R360QTH , MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , 2N7000 , NTPF082N65S3F , SIHA11N80E , SKS10N20 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y .

History: SM6A07NSF | ELM34405AA | KND8103A | CS10N80P | HSH250N10 | SSP65R260S2E | IPA50R299CP

Keywords - NTP082N65S3F MOSFET datasheet

 NTP082N65S3F cross reference
 NTP082N65S3F equivalent finder
 NTP082N65S3F lookup
 NTP082N65S3F substitution
 NTP082N65S3F replacement

 

 
Back to Top

 


 
.