NTP082N65S3F Datasheet and Replacement
Type Designator: NTP082N65S3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: TO220
NTP082N65S3F substitution
NTP082N65S3F Datasheet (PDF)
ntp082n65s3f.pdf

www.onsemi.comNTP082N65S3FN-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 mFeatures Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)
ntp082n65s3f.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor NTP082N65S3FFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesUPSPower supplySwitching applicationsABSOLUTE MAXIMUM RATI
Datasheet: MDP1921 , MMD80R900P , MMF60R360QTH , MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , IRLZ44N , NTPF082N65S3F , SIHA11N80E , SKS10N20 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y .
History: L2N7002KLT1G | IPP60R170CFD7 | IRFB4228 | IRF821FI | 2N3380 | IRFB4137 | MMD80R1K2QZRH
Keywords - NTP082N65S3F MOSFET datasheet
NTP082N65S3F cross reference
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History: L2N7002KLT1G | IPP60R170CFD7 | IRFB4228 | IRF821FI | 2N3380 | IRFB4137 | MMD80R1K2QZRH



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