All MOSFET. NTP082N65S3F Datasheet

 

NTP082N65S3F Datasheet and Replacement


   Type Designator: NTP082N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 81 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO220
 

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NTP082N65S3F Datasheet (PDF)

 ..1. Size:836K  onsemi
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NTP082N65S3F

www.onsemi.comNTP082N65S3FN-Channel SuperFET III FRFET MOSFET 650 V, 40 A, 82 mFeatures Description 700 V @ TJ = 150 oC SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 70 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 81 nC)

 ..2. Size:206K  inchange semiconductor
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NTP082N65S3F

INCHANGE Semiconductorisc N-Channel MOSFET Transistor NTP082N65S3FFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesUPSPower supplySwitching applicationsABSOLUTE MAXIMUM RATI

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXKP24N60C5 | IRFP4868 | CS20N60P | SM6A07NSF

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