All MOSFET. NTPF082N65S3F Datasheet

 

NTPF082N65S3F MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTPF082N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO220F

 NTPF082N65S3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTPF082N65S3F Datasheet (PDF)

 ..1. Size:317K  onsemi
 ntpf082n65s3f.pdf

NTPF082N65S3F NTPF082N65S3F

NTPF082N65S3FMOSFET Power, N-Channel,SUPERFET III, FRFET650 V, 40 A, 82 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to m

 ..2. Size:201K  inchange semiconductor
 ntpf082n65s3f.pdf

NTPF082N65S3F NTPF082N65S3F

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor NTPF082N65S3FFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATI

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