NTPF082N65S3F Datasheet and Replacement
Type Designator: NTPF082N65S3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: TO220F
NTPF082N65S3F substitution
NTPF082N65S3F Datasheet (PDF)
ntpf082n65s3f.pdf

NTPF082N65S3FMOSFET Power, N-Channel,SUPERFET III, FRFET650 V, 40 A, 82 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to m
ntpf082n65s3f.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor NTPF082N65S3FFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATI
Datasheet: MMD80R900P , MMF60R360QTH , MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , IRFP260 , SIHA11N80E , SKS10N20 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD .
History: RJK6035DPP-E0 | STB20NM50-1 | JSM2302 | SWD2N60DC | NTTFS4C10NTAG | TMAN20N50 | STB30NF10T4
Keywords - NTPF082N65S3F MOSFET datasheet
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History: RJK6035DPP-E0 | STB20NM50-1 | JSM2302 | SWD2N60DC | NTTFS4C10NTAG | TMAN20N50 | STB30NF10T4



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