MTY30N50E Datasheet. Specs and Replacement
Type Designator: MTY30N50E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 775 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO264
MTY30N50E substitution
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MTY30N50E datasheet
mty30n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY30N50E/D Designer's Data Sheet MTY30N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 30 AMPERES energy in the avalanche and commutation modes. This new energy 500 VOLTS e... See More ⇒
mty30n50e.pdf
MTY30N50E Preferred Device Power MOSFET 30 Amps, 500 Volts N-Channel TO-264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading http //onsemi.com performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation 30 AMPERES modes. Designed for h... See More ⇒
mty30n50erev2x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY30N50E/D Designer's Data Sheet MTY30N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 30 AMPERES energy in the avalanche and commutation modes. This new energy 500 VOLTS e... See More ⇒
Detailed specifications: SKS10N20, STP30NF10FP, SUD25N15-52-E3, SUP70040E, SWHA069R10VS, TK290P60Y, VN88AFD, 2SK3262-01MR, SPP20N60C3, CMP80N06, CMB80N06, CMI80N06, BUK437-500A, BUK637-400B, NTGD4161PT1G, NTGD4169FT1G, NTGS1135PT1G
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