All MOSFET. MTY30N50E Datasheet

 

MTY30N50E Datasheet and Replacement


   Type Designator: MTY30N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 775 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO264
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MTY30N50E Datasheet (PDF)

 ..1. Size:204K  motorola
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MTY30N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY30N50E/DDesigner's Data SheetMTY30N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high30 AMPERESenergy in the avalanche and commutation modes. This new energy500 VOLTSe

 ..2. Size:196K  onsemi
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MTY30N50E

MTY30N50EPreferred DevicePower MOSFET30 Amps, 500 VoltsN-Channel TO-264This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation30 AMPERESmodes. Designed for h

 0.1. Size:237K  motorola
 mty30n50erev2x.pdf pdf_icon

MTY30N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY30N50E/DDesigner's Data SheetMTY30N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high30 AMPERESenergy in the avalanche and commutation modes. This new energy500 VOLTSe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 20N03L-TO252 | 2N6762JTXV

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