All MOSFET. BUK637-400B Datasheet

 

BUK637-400B Datasheet and Replacement


   Type Designator: BUK637-400B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO3PN
 

 BUK637-400B substitution

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BUK637-400B Datasheet (PDF)

 ..1. Size:208K  philips
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BUK637-400B

 7.1. Size:210K  inchange semiconductor
 buk637-500b.pdf pdf_icon

BUK637-400B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK637-500BFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

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History: AON3611

Keywords - BUK637-400B MOSFET datasheet

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