BUK637-400B Datasheet and Replacement
Type Designator: BUK637-400B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3PN
BUK637-400B substitution
BUK637-400B Datasheet (PDF)
buk637-500b.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK637-500BFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Datasheet: TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E , CMP80N06 , CMB80N06 , CMI80N06 , BUK437-500A , 4N60 , NTGD4161PT1G , NTGD4169FT1G , NTGS1135PT1G , NTGS3130NT1G , NTGS3136PT1G , NTGS3433T1G , NTGS3441BT1G , NTGS3441PT1G .
History: APT6070AN
Keywords - BUK637-400B MOSFET datasheet
BUK637-400B cross reference
BUK637-400B equivalent finder
BUK637-400B lookup
BUK637-400B substitution
BUK637-400B replacement
History: APT6070AN



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