BUK637-400B PDF Specs and Replacement
Type Designator: BUK637-400B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3PN
BUK637-400B substitution
BUK637-400B PDF Specs
buk637-500b.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK637-500B FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
Detailed specifications: TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E , CMP80N06 , CMB80N06 , CMI80N06 , BUK437-500A , 12N60 , NTGD4161PT1G , NTGD4169FT1G , NTGS1135PT1G , NTGS3130NT1G , NTGS3136PT1G , NTGS3433T1G , NTGS3441BT1G , NTGS3441PT1G .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
