All MOSFET. BUK637-400B Datasheet

 

BUK637-400B MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK637-400B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO3PN

BUK637-400B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK637-400B Datasheet (PDF)

1.1. buk637-400b.pdf Size:208K _update-mosfet

BUK637-400B BUK637-400B



1.2. buk637-400b.pdf Size:208K _philips

BUK637-400B BUK637-400B



 3.1. buk637-500b.pdf Size:210K _inchange_semiconductor

BUK637-400B BUK637-400B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK637-500B ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top