NTGS1135PT1G Datasheet. Specs and Replacement
Type Designator: NTGS1135PT1G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: TSOP-6
NTGS1135PT1G substitution
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NTGS1135PT1G datasheet
ntgs1135p ntgs1135pt1g.pdf
NTGS1135P Power MOSFET -8 V, -5.8 A, Single P-Channel, TSOP-6 Features Ultra Low RDS(on) 1.2 V RDS(on) Rating http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications Load Switch 31 mW @ -4.5 V Battery Management 38 mW @ -2.5 V -8 V -4.6 A 57 mW @ -1.8 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 300 mW @ -1.2 V Parameter... See More ⇒
Detailed specifications: MTY30N50E, CMP80N06, CMB80N06, CMI80N06, BUK437-500A, BUK637-400B, NTGD4161PT1G, NTGD4169FT1G, IRFB3607, NTGS3130NT1G, NTGS3136PT1G, NTGS3433T1G, NTGS3441BT1G, NTGS3441PT1G, NTGS3441T1, NTGS3443BT1G, NTGS3443T1
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