All MOSFET. NTGS1135PT1G Datasheet

 

NTGS1135PT1G Datasheet and Replacement


   Type Designator: NTGS1135PT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TSOP-6
 

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NTGS1135PT1G Datasheet (PDF)

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NTGS1135PT1G

NTGS1135PPower MOSFET-8 V, -5.8 A, Single P-Channel, TSOP-6Features Ultra Low RDS(on) 1.2 V RDS(on) Ratinghttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications Load Switch 31 mW @ -4.5 V Battery Management38 mW @ -2.5 V-8 V -4.6 A57 mW @ -1.8 VMAXIMUM RATINGS (TJ = 25C unless otherwise stated)300 mW @ -1.2 VParameter

Datasheet: MTY30N50E , CMP80N06 , CMB80N06 , CMI80N06 , BUK437-500A , BUK637-400B , NTGD4161PT1G , NTGD4169FT1G , AON7506 , NTGS3130NT1G , NTGS3136PT1G , NTGS3433T1G , NTGS3441BT1G , NTGS3441PT1G , NTGS3441T1 , NTGS3443BT1G , NTGS3443T1 .

History: WMM26N60F2 | NP90N055MUH | 3N188

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