All MOSFET. NTGS5120PT1G Datasheet

 

NTGS5120PT1G Datasheet and Replacement


   Type Designator: NTGS5120PT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.9 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.111 Ohm
   Package: TSOP-6
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NTGS5120PT1G Datasheet (PDF)

 ..1. Size:106K  onsemi
 ntgs5120pt1g.pdf pdf_icon

NTGS5120PT1G

NTGS5120PPower MOSFET-60 V, -2.9 A, Single P-Channel, TSOP-6Features 60 V BVds, Low RDS(on) in TSOP-6 Package 4.5 V Gate Ratinghttp://onsemi.com This is a Pb-Free DeviceApplicationsV(BR)DSS RDS(ON) MAX ID MAX High Side Load Switch111 mW @ -10 V Power Switch for Printers, Communication Equipment-60 V -2.9 A142 mW @ -4.5 VMAXIMUM RATINGS (TJ = 25C un

 5.1. Size:196K  onsemi
 ntgs5120p nvgs5120p.pdf pdf_icon

NTGS5120PT1G

NTGS5120P, NVGS5120PMOSFET Power, Single,P-Channel, TSOP-6-60 V, -2.9 AFeatureshttp://onsemi.com 60 V BVds, Low RDS(on) in TSOP-6 Package 4.5 V Gate Rating NV Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(ON) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and111 mW @ -10 VPPAP Capable-60 V -2.9 A142 mW @ -4

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History: FDMS9620S | WMM11N80M3 | IRFI7536G

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