NTGS5120PT1G Datasheet. Specs and Replacement

Type Designator: NTGS5120PT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.9 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.111 Ohm

Package: TSOP-6

NTGS5120PT1G substitution

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NTGS5120PT1G datasheet

 ..1. Size:106K  onsemi
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NTGS5120PT1G

NTGS5120P Power MOSFET -60 V, -2.9 A, Single P-Channel, TSOP-6 Features 60 V BVds, Low RDS(on) in TSOP-6 Package 4.5 V Gate Rating http //onsemi.com This is a Pb-Free Device Applications V(BR)DSS RDS(ON) MAX ID MAX High Side Load Switch 111 mW @ -10 V Power Switch for Printers, Communication Equipment -60 V -2.9 A 142 mW @ -4.5 V MAXIMUM RATINGS (TJ = 25 C un... See More ⇒

 5.1. Size:196K  onsemi
 ntgs5120p nvgs5120p.pdf pdf_icon

NTGS5120PT1G

NTGS5120P, NVGS5120P MOSFET Power, Single, P-Channel, TSOP-6 -60 V, -2.9 A Features http //onsemi.com 60 V BVds, Low RDS(on) in TSOP-6 Package 4.5 V Gate Rating NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(ON) MAX ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 111 mW @ -10 V PPAP Capable -60 V -2.9 A 142 mW @ -4... See More ⇒

Detailed specifications: NTGS3441T1, NTGS3443BT1G, NTGS3443T1, NTGS3446T1, NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, 2SK3568, NTHD2110TT1G, NTHD3101FT1G, NTHD3101FT3, NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3

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