All MOSFET. NTHD5904NT1 Datasheet

 

NTHD5904NT1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTHD5904NT1
   Marking Code: D3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: CHIPFET

 NTHD5904NT1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTHD5904NT1 Datasheet (PDF)

 ..1. Size:65K  onsemi
 nthd5904n-d nthd5904nt1 nthd5904nt3.pdf

NTHD5904NT1 NTHD5904NT1

NTHD5904NPower MOSFET20 V, 4.5 A, Dual N-Channel, ChipFETtFeatures Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. http://onsemi.comIdeal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal forV(BR)DSS RDS(on) TYP ID MAXApplications Where Heat Tra

 7.1. Size:67K  onsemi
 nthd5903t1-d.pdf

NTHD5904NT1 NTHD5904NT1

NTHD5903Power MOSFET-20 V, -3.0 A, Dual P-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available130 mW @ -4.5 V-20 V-3.0 A215 mW @ -2.5 VApplications Power Management in Portable and Battery-Pow

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