NTHD5904NT3 Datasheet. Specs and Replacement

Type Designator: NTHD5904NT3  📄📄 

Marking Code: D3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.64 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V

Qg ⓘ - Total Gate Charge: 4 nC

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: CHIPFET

NTHD5904NT3 substitution

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NTHD5904NT3 datasheet

 ..1. Size:65K  onsemi
 nthd5904n-d nthd5904nt1 nthd5904nt3.pdf pdf_icon

NTHD5904NT3

NTHD5904N Power MOSFET 20 V, 4.5 A, Dual N-Channel, ChipFETt Features Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. http //onsemi.com Ideal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for V(BR)DSS RDS(on) TYP ID MAX Applications Where Heat Tra... See More ⇒

 7.1. Size:67K  onsemi
 nthd5903t1-d.pdf pdf_icon

NTHD5904NT3

NTHD5903 Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFETE Features Low RDS(on) for Higher Efficiency http //onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available 130 mW @ -4.5 V -20 V -3.0 A 215 mW @ -2.5 V Applications Power Management in Portable and Battery-Pow... See More ⇒

Detailed specifications: NTGS5120PT1G, NTHD2110TT1G, NTHD3101FT1G, NTHD3101FT3, NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, IRF520, NTHS2101PT1, NTHS2101PT1G, NTHS4101PT1G, NTHS4111PT1G, NTHS4166NT1G, NTHS4501NT1, NTHS4501NT1G, NTHS5402T1

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