NTHD5904NT3 Datasheet and Replacement
Type Designator: NTHD5904NT3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.64 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: CHIPFET
NTHD5904NT3 substitution
NTHD5904NT3 Datasheet (PDF)
nthd5904n-d nthd5904nt1 nthd5904nt3.pdf

NTHD5904NPower MOSFET20 V, 4.5 A, Dual N-Channel, ChipFETtFeatures Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. http://onsemi.comIdeal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal forV(BR)DSS RDS(on) TYP ID MAXApplications Where Heat Tra
nthd5903t1-d.pdf

NTHD5903Power MOSFET-20 V, -3.0 A, Dual P-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available130 mW @ -4.5 V-20 V-3.0 A215 mW @ -2.5 VApplications Power Management in Portable and Battery-Pow
Datasheet: NTGS5120PT1G , NTHD2110TT1G , NTHD3101FT1G , NTHD3101FT3 , NTHD3133PFT1G , NTHD4N02FT1 , NTHD4P02FT1G , NTHD5904NT1 , CS150N03A8 , NTHS2101PT1 , NTHS2101PT1G , NTHS4101PT1G , NTHS4111PT1G , NTHS4166NT1G , NTHS4501NT1 , NTHS4501NT1G , NTHS5402T1 .
History: NCE6990D
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History: NCE6990D



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