All MOSFET. NTHS2101PT1G Datasheet

 

NTHS2101PT1G Datasheet and Replacement


   Type Designator: NTHS2101PT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: CHIPFET
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NTHS2101PT1G Datasheet (PDF)

 ..1. Size:54K  onsemi
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NTHS2101PT1G

NTHS2101PPower MOSFET -8.0 V, -7.5 A P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6making it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS Ultra Low RDS(on) TYP ID MAX Low Profile (

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History: SI2338DS | AON6794 | BUZ84 | CED05N8 | MTM2N85 | IRLR024 | BL10N70-A

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