NTJD4105CT1G Datasheet and Replacement
Type Designator: NTJD4105CT1G
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.63 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 227 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT-363
NTJD4105CT1G Datasheet (PDF)
ntjd4105ct1g.pdf

NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Devicehttp://onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm)0.29 W @ 4.5 VN-Ch 20 V 0.63 A Pb-Free Package M
ntjd4105c.pdf

NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performancehttp://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available0.29 W @ 4.5 VN-Ch
Datasheet: NTHS4501NT1 , NTHS4501NT1G , NTHS5402T1 , NTHS5404T1G , NTHS5441PT1G , NTHS5441T1G , NTHS5443T1 , NTHS5445T1 , STP65NF06 , NTJD4152PT1G , NTJD4158CT1G , NTJS3151PT1G , NTJS3151PT2 , NTJS3157NT1G , NTJS3157NT2 , NTJS3157NT4 , NTJS4151PT1 .
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