NTJD4105CT1G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTJD4105CT1G
Marking Code: TC
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.27
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.63
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.3
nC
trⓘ - Rise Time: 227
nS
Cossⓘ -
Output Capacitance: 13
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
SOT-363
NTJD4105CT1G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTJD4105CT1G
Datasheet (PDF)
..1. Size:72K onsemi
ntjd4105ct1g.pdf 
NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Devicehttp://onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm)0.29 W @ 4.5 VN-Ch 20 V 0.63 A Pb-Free Package M
5.1. Size:149K onsemi
ntjd4105c.pdf
NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performancehttp://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available0.29 W @ 4.5 VN-Ch
8.1. Size:142K onsemi
ntjd4158c.pdf
NTJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Featureshttp://onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 VN-Ch This is a Pb-Free Device 0.25 A30 V1.5 W @ 2.5 VApplications215 mW @ -4.5 VP-Ch-0.88 A-20 V
8.2. Size:126K onsemi
ntjd4152p nvjd4152p.pdf
NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an
8.3. Size:88K onsemi
ntjd4152p.pdf
NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88http://onsemi.comFeatures Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V
8.4. Size:142K onsemi
ntjd4158c nvjd4158c.pdf
NTJD4158C, NVJD4158CMOSFET Small Signal,Complementary, SC-8830 V/-20 V, +0.25/-0.88 AFeatureswww.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring UniqueN-Ch0.25 A30 VSite and Cont
8.5. Size:72K onsemi
ntjd4152pt1g.pdf
NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88Features Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V Load/Power Mana
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