NTJD4105CT1G Datasheet: MOSFET, NP-Ch, 20V, 0.63A. Full specification with pinout and replacement list

NTJD4105CT1G Datasheet. Specs and Replacement

Type Designator: NTJD4105CT1G 📄📄

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 227 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT-363

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NTJD4105CT1G datasheet

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NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features Complementary N and P Channel Device http //onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating Class 1 V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm) 0.29 W @ 4.5 V N-Ch 20 V 0.63 A Pb-Free Package M... See More ⇒

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NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performance http //onsemi.com ESD Protected Gate - ESD Rating Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available 0.29 W @ 4.5 V N-Ch... See More ⇒