NTK3139PT1G Datasheet. Specs and Replacement
Type Designator: NTK3139PT1G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: SOT-723
NTK3139PT1G substitution
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NTK3139PT1G datasheet
ntk3139p.pdf
NTK3139P MOSFET Power, Single, P-Channel with ESD Protection, SOT-723 -20 V, -780 mA www.onsemi.com Features V(BR)DSS RDS(on) TYP ID Max P-channel Switch with Low RDS(on) 0.38 W @ -4.5 V -780 mA 44% Smaller Footprint and 38% Thinner than SC-89 0.52 W @ -2.5 V -660 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating -20 V 0.70 W @ -1.8 V -100 mA Operated at ... See More ⇒
Detailed specifications: NTJS4151PT1, NTJS4151PT1G, NTJS4160NT1G, NTJS4405NT1, NTJS4405NT4, NTK3043NAT5G, NTK3043NT1G, NTK3134NT1G, IRFZ44N, NTK3142PT1G, NTLGF3402PT1G, NTLGF3501NT2G, NTLJD3119CTAG, NTLJD3119CTBG, NTLJD3182FZTAG, NTLJD3182FZTBG, NTLJF3117PT1G
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