NTLLD4901NF Datasheet. Specs and Replacement
Type Designator: NTLLD4901NF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: WDFN8
NTLLD4901NF substitution
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NTLLD4901NF datasheet
ntlld4901nf.pdf
NTLLD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 11 A / Low Side 13 A, http //onsemi.com Dual N-Channel, WDFN (3 mm x 3 mm) V(BR)DSS RDS(ON) MAX ID MAX Features 17.4 mW @ 10 V Q1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space 11 A 30 V 25 mW @ 4.5 V Low Side MOSFET with Integrated Schottky 13.3 mW @ 10 V Minimized Pa... See More ⇒
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
