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NTMS7N03R2G Spec and Replacement


   Type Designator: NTMS7N03R2G
   Marking Code: E7N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26 nC
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOIC-8

 NTMS7N03R2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMS7N03R2G Specs

 ..1. Size:95K  onsemi
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NTMS7N03R2G

NTMS7N03R2G Power MOSFET 7 Amps, 30 Volts, N-Channel SOIC-8 Features Ultra Low RDS(on) www.onsemi.com Higher Efficiency Extending Battery Life 7 AMPERES Logic Level Gate Drive Miniature SOIC-8 Surface Mount Package 30 VOLTS Avalanche Energy Specified RDS(on) = 23 mW IDSS Specified at Elevated Temperature This is a Pb-Free Device N-Channel D Typical A... See More ⇒

 ..2. Size:93K  onsemi
 ntms7n03r2 ntms7n03r2g.pdf pdf_icon

NTMS7N03R2G

NTMS7N03R2 Power MOSFET 7 Amps, 30 Volts N-Channel SOIC-8 Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life 7 AMPERES Logic Level Gate Drive 30 VOLTS Miniature SOIC-8 Surface Mount Package RDS(on) = 23 mW Avalanche Energy Specified IDSS Specified at Elevated Temperature N-Channel Pb-Free Package is Available D Typ... See More ⇒

Detailed specifications: NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , NTMS5838NLR2G , NTMS5P02R2G , NTMS5P02R2SG , P60NF06 , NTMSD2P102LR2 , NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ , NTNS3193NZ , NTNS3A65PZ , NTNS3A91PZ , NTNUS3171PZT5G .

History: DMG7702SFG | IXFN100N50Q3

Keywords - NTMS7N03R2G MOSFET specs

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