NTNUS3171PZT5G Datasheet and Replacement
Type Designator: NTNUS3171PZT5G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 3.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT-1123
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NTNUS3171PZT5G Datasheet (PDF)
ntnus3171pzt5g.pdf

NTNUS3171PZSmall Signal MOSFET-20 V, -200 mA, Single P-Channel,1.0 x 0.6 mm SOT-1123 PackageFeatures http://onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.5 W @ -4.5 V 1.5 V Gate Voltage Rating4.0 W @ -2.5 V Ultra Thin Profile (
ntnus3171pz.pdf

NTNUS3171PZSmall Signal MOSFET-20 V, -200 mA, Single P-Channel,1.0 x 0.6 mm SOT-1123 PackageFeatures http://onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.5 W @ -4.5 V 1.5 V Gate Voltage Rating4.0 W @ -2.5 V Ultra Thin Profile (
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3700 | IPB22N03S4L-15
Keywords - NTNUS3171PZT5G MOSFET datasheet
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History: 2SK3700 | IPB22N03S4L-15



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