NTNUS3171PZT5G Datasheet. Specs and Replacement

Type Designator: NTNUS3171PZT5G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 3.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: SOT-1123

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NTNUS3171PZT5G datasheet

 ..1. Size:90K  onsemi
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NTNUS3171PZT5G

NTNUS3171PZ Small Signal MOSFET -20 V, -200 mA, Single P-Channel, 1.0 x 0.6 mm SOT-1123 Package Features http //onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm V(BR)DSS RDS(ON) MAX ID Max Package 3.5 W @ -4.5 V 1.5 V Gate Voltage Rating 4.0 W @ -2.5 V Ultra Thin Profile (... See More ⇒

 3.1. Size:95K  onsemi
 ntnus3171pz.pdf pdf_icon

NTNUS3171PZT5G

NTNUS3171PZ Small Signal MOSFET -20 V, -200 mA, Single P-Channel, 1.0 x 0.6 mm SOT-1123 Package Features http //onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm V(BR)DSS RDS(ON) MAX ID Max Package 3.5 W @ -4.5 V 1.5 V Gate Voltage Rating 4.0 W @ -2.5 V Ultra Thin Profile (... See More ⇒

Detailed specifications: NTMS7N03R2G, NTMSD2P102LR2, NTMSD3P102R2, NTMSD6N303R2, NTNS3164NZ, NTNS3193NZ, NTNS3A65PZ, NTNS3A91PZ, IRFZ46N, NTP125N02RG, NTP13N10, NTP18N06, NTP18N06L, NTP22N06, NTP22N06L, NTP27N06, NTP27N06L

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