NTNUS3171PZT5G Datasheet and Replacement
Type Designator: NTNUS3171PZT5G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 3.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT-1123
NTNUS3171PZT5G substitution
NTNUS3171PZT5G Datasheet (PDF)
ntnus3171pzt5g.pdf

NTNUS3171PZSmall Signal MOSFET-20 V, -200 mA, Single P-Channel,1.0 x 0.6 mm SOT-1123 PackageFeatures http://onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.5 W @ -4.5 V 1.5 V Gate Voltage Rating4.0 W @ -2.5 V Ultra Thin Profile (
ntnus3171pz.pdf

NTNUS3171PZSmall Signal MOSFET-20 V, -200 mA, Single P-Channel,1.0 x 0.6 mm SOT-1123 PackageFeatures http://onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.5 W @ -4.5 V 1.5 V Gate Voltage Rating4.0 W @ -2.5 V Ultra Thin Profile (
Datasheet: NTMS7N03R2G , NTMSD2P102LR2 , NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ , NTNS3193NZ , NTNS3A65PZ , NTNS3A91PZ , STP65NF06 , NTP125N02RG , NTP13N10 , NTP18N06 , NTP18N06L , NTP22N06 , NTP22N06L , NTP27N06 , NTP27N06L .
History: HSBB3002 | SISS23DN | HY3003P | 2SJ534 | IRFR3709ZCT | NCEP050N85G | R6576KNZ1
Keywords - NTNUS3171PZT5G MOSFET datasheet
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NTNUS3171PZT5G replacement
History: HSBB3002 | SISS23DN | HY3003P | 2SJ534 | IRFR3709ZCT | NCEP050N85G | R6576KNZ1



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