NTP125N02RG Datasheet. Specs and Replacement

Type Designator: NTP125N02RG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 1105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: TO-220

NTP125N02RG substitution

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NTP125N02RG datasheet

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NTP125N02RG

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Body Diode for Low trr and Qrr and Optimized for Synchronous Operation 125 AMPERES, 24 VOLTS Low Ciss to Minimize Driver Loss RDS(on) = 3.7 mW (Typ) Optimized Qgd and RDS(on) for Shoot-through Protection Low Gate Ch... See More ⇒

Detailed specifications: NTMSD2P102LR2, NTMSD3P102R2, NTMSD6N303R2, NTNS3164NZ, NTNS3193NZ, NTNS3A65PZ, NTNS3A91PZ, NTNUS3171PZT5G, IRF830, NTP13N10, NTP18N06, NTP18N06L, NTP22N06, NTP22N06L, NTP27N06, NTP27N06L, NTP2955G

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