NTP125N02RG Datasheet and Replacement
Type Designator: NTP125N02RG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 113.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO-220
NTP125N02RG Datasheet (PDF)
ntb125n02r ntb125n02r ntp125n02r ntp125n02rg.pdf

NTB125N02R, NTP125N02RPower MOSFET125 A, 24 V N-ChannelTO-220, D2PAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Body Diode for Low trr and Qrr and Optimized for SynchronousOperation 125 AMPERES, 24 VOLTS Low Ciss to Minimize Driver LossRDS(on) = 3.7 mW (Typ) Optimized Qgd and RDS(on) for Shoot-through Protection Low Gate Ch
Datasheet: NTMSD2P102LR2 , NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ , NTNS3193NZ , NTNS3A65PZ , NTNS3A91PZ , NTNUS3171PZT5G , IRF1405 , NTP13N10 , NTP18N06 , NTP18N06L , NTP22N06 , NTP22N06L , NTP27N06 , NTP27N06L , NTP2955G .
History: IPB80N06S2L-05 | SUB75N06-08
Keywords - NTP125N02RG MOSFET datasheet
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History: IPB80N06S2L-05 | SUB75N06-08



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