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NTP13N10 Spec and Replacement


   Type Designator: NTP13N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO-220

 NTP13N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTP13N10 Specs

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NTP13N10

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N-Channel Enhancement-Mode TO-220 Features Source-to-Drain Diode Recovery Time Comparable to a Discrete http //onsemi.com Fast Recovery Diode Avalanche Energy Specified VDSS RDS(ON) TYP ID MAX IDSS and RDS(on) Specified at Elevated Temperature 100 V 165 m @ 10 V 13 A Pb-Free Package is Available Typical Applicat... See More ⇒

Detailed specifications: NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ , NTNS3193NZ , NTNS3A65PZ , NTNS3A91PZ , NTNUS3171PZT5G , NTP125N02RG , IRLB3034 , NTP18N06 , NTP18N06L , NTP22N06 , NTP22N06L , NTP27N06 , NTP27N06L , NTP2955G , NTP30N06 .

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