All MOSFET. NTP13N10 Datasheet

 

NTP13N10 Datasheet and Replacement


   Type Designator: NTP13N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO-220
 

 NTP13N10 substitution

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NTP13N10 Datasheet (PDF)

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NTP13N10

NTP13N10Preferred DevicePower MOSFET13 A, 100 V, N-ChannelEnhancement-Mode TO-220Features Source-to-Drain Diode Recovery Time Comparable to a Discretehttp://onsemi.comFast Recovery Diode Avalanche Energy SpecifiedVDSS RDS(ON) TYP ID MAX IDSS and RDS(on) Specified at Elevated Temperature100 V 165 m @ 10 V 13 A Pb-Free Package is AvailableTypical Applicat

Datasheet: NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ , NTNS3193NZ , NTNS3A65PZ , NTNS3A91PZ , NTNUS3171PZT5G , NTP125N02RG , EMB04N03H , NTP18N06 , NTP18N06L , NTP22N06 , NTP22N06L , NTP27N06 , NTP27N06L , NTP2955G , NTP30N06 .

History: SSM6P40TU | DH50N15 | AM2337P

Keywords - NTP13N10 MOSFET datasheet

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