NTP13N10 Datasheet. Specs and Replacement

Type Designator: NTP13N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: TO-220

NTP13N10 substitution

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NTP13N10 datasheet

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NTP13N10

NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N-Channel Enhancement-Mode TO-220 Features Source-to-Drain Diode Recovery Time Comparable to a Discrete http //onsemi.com Fast Recovery Diode Avalanche Energy Specified VDSS RDS(ON) TYP ID MAX IDSS and RDS(on) Specified at Elevated Temperature 100 V 165 m @ 10 V 13 A Pb-Free Package is Available Typical Applicat... See More ⇒

Detailed specifications: NTMSD3P102R2, NTMSD6N303R2, NTNS3164NZ, NTNS3193NZ, NTNS3A65PZ, NTNS3A91PZ, NTNUS3171PZT5G, NTP125N02RG, IRLB3034, NTP18N06, NTP18N06L, NTP22N06, NTP22N06L, NTP27N06, NTP27N06L, NTP2955G, NTP30N06

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