NTP52N10 Datasheet. Specs and Replacement
Type Designator: NTP52N10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 620 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-220
NTP52N10 substitution
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NTP52N10 datasheet
ntp52n10.pdf
NTP52N10 Power MOSFET 60 Amps, 100 Volts N-Channel Enhancement Mode TO-220 http //onsemi.com Features Source-to-Drain Diode Recovery Time comparable to a Discrete 60 AMPERES Fast Recovery Diode 100 VOLTS Avalanche Energy Specified 30 mW @ VGS = 10 V IDSS and RDS(on) Specified at Elevated Temperature Pb-Free Package is Available* N-Channel D Applications PWM ... See More ⇒
Detailed specifications: NTP2955G, NTP30N06, NTP30N06L, NTP30N20G, NTP35N15G, NTP4302, NTP45N06, NTP45N06L, IRF3205, NTP5404NRG, NTP5411NG, NTP5412NG, NTP5426NG, NTP5860N, NTP5863NG, NTP5864NG, NTP60N06
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