NTP52N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTP52N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 620 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-220
NTP52N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTP52N10 Datasheet (PDF)
..1. Size:159K onsemi
ntp52n10.pdf
ntp52n10.pdf
NTP52N10Power MOSFET60 Amps, 100 VoltsN-Channel Enhancement Mode TO-220http://onsemi.comFeatures Source-to-Drain Diode Recovery Time comparable to a Discrete60 AMPERESFast Recovery Diode100 VOLTS Avalanche Energy Specified30 mW @ VGS = 10 V IDSS and RDS(on) Specified at Elevated Temperature Pb-Free Package is Available*N-ChannelDApplications PWM
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