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NTP52N10 Spec and Replacement


   Type Designator: NTP52N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 72 nC
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-220

 NTP52N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTP52N10 Specs

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NTP52N10

NTP52N10 Power MOSFET 60 Amps, 100 Volts N-Channel Enhancement Mode TO-220 http //onsemi.com Features Source-to-Drain Diode Recovery Time comparable to a Discrete 60 AMPERES Fast Recovery Diode 100 VOLTS Avalanche Energy Specified 30 mW @ VGS = 10 V IDSS and RDS(on) Specified at Elevated Temperature Pb-Free Package is Available* N-Channel D Applications PWM ... See More ⇒

Detailed specifications: NTP2955G , NTP30N06 , NTP30N06L , NTP30N20G , NTP35N15G , NTP4302 , NTP45N06 , NTP45N06L , IRF3205 , NTP5404NRG , NTP5411NG , NTP5412NG , NTP5426NG , NTP5860N , NTP5863NG , NTP5864NG , NTP60N06 .

Keywords - NTP52N10 MOSFET specs

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