NTR3162PT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTR3162PT1G
Marking Code: TRD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.3 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT-23
NTR3162PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTR3162PT1G Datasheet (PDF)
ntr3162pt1g.pdf
NTR3162PPower MOSFET--20 V, --3.6 A, Single P--Channel, SOT--23Features Low RDS(on) at Low Gate Voltage --0.3 V Low Threshold Voltagehttp://onsemi.com Fast Switching Speed This is a Pb--Free DeviceV(BR)DSS RDS(on) MAX ID MAXApplications70 m @--4.5 V --2.2 A Battery Management--20 V 95 m @--2.5 V --1.9 A LoadSwitchinPWM120 m @--1.8 V --1.7 A
ntr3162p.pdf
NTR3162PPower MOSFET--20 V, --3.6 A, Single P--Channel, SOT--23Features Low RDS(on) at Low Gate Voltage --0.3 V Low Threshold Voltagehttp://onsemi.com Fast Switching Speed This is a Pb--Free DeviceV(BR)DSS RDS(on) MAX ID MAXApplications70 m @--4.5 V --2.2 A Battery Management--20 V 95 m @--2.5 V --1.9 A LoadSwitchinPWM120 m @--1.8 V --1.7 A
ntr3161n ntr3161nt1g.pdf
NTR3161NPower MOSFET20 V, 3.3 A, Single N-Channel, SOT-23Features Low RDS(on) Low Gate Chargehttp://onsemi.com Low Threshold Voltage Halide-FreeV(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device50 mW @ 4.5 V 3.3 AApplications20 V 63 mW @ 2.5 V 3.0 A DC-DC Conversion87 mW @ 1.8 V 2.5 A Battery Management Load/Power SwitchSIMPLIFIED SC
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