NTR3162PT1G Datasheet. Specs and Replacement

Type Designator: NTR3162PT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT-23

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NTR3162PT1G datasheet

 ..1. Size:276K  onsemi
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NTR3162PT1G

NTR3162P Power MOSFET --20 V, --3.6 A, Single P--Channel, SOT--23 Features Low RDS(on) at Low Gate Voltage --0.3 V Low Threshold Voltage http //onsemi.com Fast Switching Speed This is a Pb--Free Device V(BR)DSS RDS(on) MAX ID MAX Applications 70 m @--4.5 V --2.2 A Battery Management --20 V 95 m @--2.5 V --1.9 A LoadSwitchinPWM 120 m @--1.8 V --1.7 A ... See More ⇒

 6.1. Size:280K  onsemi
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NTR3162PT1G

NTR3162P Power MOSFET --20 V, --3.6 A, Single P--Channel, SOT--23 Features Low RDS(on) at Low Gate Voltage --0.3 V Low Threshold Voltage http //onsemi.com Fast Switching Speed This is a Pb--Free Device V(BR)DSS RDS(on) MAX ID MAX Applications 70 m @--4.5 V --2.2 A Battery Management --20 V 95 m @--2.5 V --1.9 A LoadSwitchinPWM 120 m @--1.8 V --1.7 A ... See More ⇒

 8.1. Size:100K  onsemi
 ntr3161n ntr3161nt1g.pdf pdf_icon

NTR3162PT1G

NTR3161N Power MOSFET 20 V, 3.3 A, Single N-Channel, SOT-23 Features Low RDS(on) Low Gate Charge http //onsemi.com Low Threshold Voltage Halide-Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device 50 mW @ 4.5 V 3.3 A Applications 20 V 63 mW @ 2.5 V 3.0 A DC-DC Conversion 87 mW @ 1.8 V 2.5 A Battery Management Load/Power Switch SIMPLIFIED SC... See More ⇒

Detailed specifications: NTP90N02, NTQS6463R2, NTR0202PLT1, NTR1P02L, NTR1P02T1, NTR1P02T3, NTR2101PT1G, NTR3161NT1G, IRF9540N, NTR3A30PZ, NTR4003NT1G, NTR4101PT1G, NTR4170NT1G, NTR4171PT1G, NTR4501NT1, NTR4502PT1, NTR4503NT1

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