NTS2101PT1 Datasheet and Replacement
Type Designator: NTS2101PT1
Marking Code: TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.4 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SC-70
NTS2101PT1 substitution
NTS2101PT1 Datasheet (PDF)
nts2101p-d nts2101pt1.pdf
NTS2101PPower MOSFET-8.0 V, -1.4 A, Single P-Channel, SC-70Features Leading Trench Technology for Low RDS(on) Extending Battery Life http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm)65 mW @ -4.5 V Pb-Free Package is Available-8.0 V78 mW @ -2.5 V -1.4 AApplications High
nts2101pt1g.pdf
NTS2101PT1Gwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv
nts2101p.pdf
NTS2101PPower MOSFET-8.0 V, -1.4 A, Single P-Channel, SC-70Features Leading Trench Technology for Low RDS(on) Extending Battery Life http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm)65 mW @ -4.5 V Pb-Free Package is Available-8.0 V78 mW @ -2.5 V -1.4 AApplications High
Datasheet: NTR4171PT1G , NTR4501NT1 , NTR4502PT1 , NTR4503NT1 , NTR5103N , NTR5105P , NTR5198NL , NTRV4101P , 4N60 , NTS4001NT1 , NTS4101PT1 , NTS4172NT1G , NTS4173PT1G , NTS4409N , NTTD4401FR2 , NTTFS3A08PZ , NTTFS3A08PZTAG .
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