All MOSFET. NTS2101PT1 Datasheet

 

NTS2101PT1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTS2101PT1
   Marking Code: TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SC-70

 NTS2101PT1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTS2101PT1 Datasheet (PDF)

 ..1. Size:61K  onsemi
 nts2101p-d nts2101pt1.pdf

NTS2101PT1 NTS2101PT1

NTS2101PPower MOSFET-8.0 V, -1.4 A, Single P-Channel, SC-70Features Leading Trench Technology for Low RDS(on) Extending Battery Life http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm)65 mW @ -4.5 V Pb-Free Package is Available-8.0 V78 mW @ -2.5 V -1.4 AApplications High

 0.1. Size:2292K  cn vbsemi
 nts2101pt1g.pdf

NTS2101PT1 NTS2101PT1

NTS2101PT1Gwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv

 6.1. Size:61K  onsemi
 nts2101p.pdf

NTS2101PT1 NTS2101PT1

NTS2101PPower MOSFET-8.0 V, -1.4 A, Single P-Channel, SC-70Features Leading Trench Technology for Low RDS(on) Extending Battery Life http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm)65 mW @ -4.5 V Pb-Free Package is Available-8.0 V78 mW @ -2.5 V -1.4 AApplications High

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