NTS2101PT1 Datasheet. Specs and Replacement

Type Designator: NTS2101PT1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SC-70

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NTS2101PT1 datasheet

 ..1. Size:61K  onsemi
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NTS2101PT1

NTS2101P Power MOSFET -8.0 V, -1.4 A, Single P-Channel, SC-70 Features Leading Trench Technology for Low RDS(on) Extending Battery Life http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm) 65 mW @ -4.5 V Pb-Free Package is Available -8.0 V 78 mW @ -2.5 V -1.4 A Applications High ... See More ⇒

 0.1. Size:2292K  cn vbsemi
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NTS2101PT1

NTS2101PT1G www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Conv... See More ⇒

 6.1. Size:61K  onsemi
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NTS2101PT1

NTS2101P Power MOSFET -8.0 V, -1.4 A, Single P-Channel, SC-70 Features Leading Trench Technology for Low RDS(on) Extending Battery Life http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm) 65 mW @ -4.5 V Pb-Free Package is Available -8.0 V 78 mW @ -2.5 V -1.4 A Applications High ... See More ⇒

Detailed specifications: NTR4171PT1G, NTR4501NT1, NTR4502PT1, NTR4503NT1, NTR5103N, NTR5105P, NTR5198NL, NTRV4101P, 5N65, NTS4001NT1, NTS4101PT1, NTS4172NT1G, NTS4173PT1G, NTS4409N, NTTD4401FR2, NTTFS3A08PZ, NTTFS3A08PZTAG

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