NTS4001NT1
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTS4001NT1
Marking Code: TD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.9
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 19
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
SC-70
NTS4001NT1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTS4001NT1
Datasheet (PDF)
..1. Size:123K onsemi
nts4001nt1 nvs4001n.pdf
NTS4001N, NVS4001NSmall Signal MOSFET30 V, 270 mA, Single N-Channel, SC-70Features Low Gate Charge for Fast Switchinghttp://onsemi.com Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate AEC-Q101 Qualified and PPAP Capable - NVS4001N1.0 W @ 4.0 V270 mA30 V These Devices are Pb-Free and are RoHS Compliant1.5 W @ 2.5 V
6.1. Size:113K onsemi
nts4001n nvs4001n.pdf
NTS4001N, NVS4001NMOSFET Single,N-Channel, Small Signal,SC-7030 V, 270 mAhttp://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID Max Low Gate Charge for Fast Switching1.0 W @ 4.0 V Small Footprint - 30% Smaller than TSOP-6270 mA30 V ESD Protected Gate1.5 W @ 2.5 V AEC-Q101 Qualified and PPAP Capable - NVS4001N These Devices are Pb-Free and are RoHS Co
6.2. Size:59K onsemi
nts4001n-d.pdf
NTS4001NSmall Signal MOSFET30 V, 270 mA, Single N-Channel, SC-70Features Low Gate Charge for Fast Switching http://onsemi.com Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate1.0 W @ 4.0 V Pb-Free Package is Available270 mA30 V1.5 W @ 2.5 VApplications Low Side Load SwitchSC-70/SOT-323 (3 LEADS) Li-Ion Batte
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