NTTS2P02R2 Datasheet and Replacement
Type Designator: NTTS2P02R2
Marking Code: AD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 10 nC
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MICRO8
NTTS2P02R2 substitution
NTTS2P02R2 Datasheet (PDF)
ntts2p02r2.pdf

NTTS2P02R2Power MOSFET-2.4 Amps, -20 VoltsSingle P-Channel Micro8thttp://onsemi.comFeatures Ultra Low RDS(on)-2.4 AMPERES Higher Efficiency Extending Battery Life Logic Level Gate Drive -20 VOLTS Miniature Micro-8 Surface Mount PackageRDS(on) = 90 mW Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information ProvidedSingle P-Channel P
ntts2p03r2-d ntts2p03r2.pdf

NTTS2P03R2Power MOSFET-2.48 Amps, -30 VoltsP-Channel Enhancement ModeSingle Micro8t PackageFeatureshttp://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life-2.48 AMPERES Miniature Micro8 Surface Mount Package-30 VOLTS Diode Exhibits High Speed, Soft Recovery85 mW @ VGS = -10 V Micro8 Mounting Information Provided Pb-Free Package
Datasheet: NTTFS4C25N , NTTFS4H05N , NTTFS4H05NTAG , NTTFS4H07N , NTTFS5116PLTAG , NTTFS5811NLTAG , NTTFS5820NLTAG , NTTFS5826NLTAG , RU6888R , NTTS2P03R2 , NTY100N10 , NTZD3154NT1G , NTZD3155CT1G , NTZS3151PT1G , 3SK290 , AO4400 , BUZ48 .
History: IRFR310PBF | SSM95T07GP | IRLU3714ZPBF | IPI80CN10N
Keywords - NTTS2P02R2 MOSFET datasheet
NTTS2P02R2 cross reference
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History: IRFR310PBF | SSM95T07GP | IRLU3714ZPBF | IPI80CN10N



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