NTZS3151PT1G Datasheet and Replacement
Type Designator: NTZS3151PT1G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.86 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 61 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm
Package: SOT-563
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NTZS3151PT1G Datasheet (PDF)
ntzs3151p ntzs3151pt1g.pdf

NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices 120 mW @ -4.5 V-20 V 144 mW @ -2.5 V -950 mAApplications195 mW @ -1.8 V Load/Power SwitchesP-Channel MOSFET Battery Man
ntzs3151p.pdf

NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 120 mW @ -4.5 VCompliant -20 V 144 mW @ -2.5 V -950 mA195 mW @ -1.8 VApplicationsP-Channel MO
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: DM12N65C | SPD04N60S5 | NTD4855N-1G | SM6A12NSFP | FCPF7N60YDTU | AP6679GI-HF
Keywords - NTZS3151PT1G MOSFET datasheet
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History: DM12N65C | SPD04N60S5 | NTD4855N-1G | SM6A12NSFP | FCPF7N60YDTU | AP6679GI-HF



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