NTZS3151PT1G MOSFET Datasheet: P-Ch, 20V, 0.86A. Full specification with pinout and replacement list

NTZS3151PT1G Specs and Replacement

Type Designator: NTZS3151PT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm

Package: SOT-563

NTZS3151PT1G substitution

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NTZS3151PT1G datasheet

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NTZS3151P Small Signal MOSFET -20 V, -950 mA, P-Channel SOT-563 Features Low RDS(on) Improving System Efficiency http //onsemi.com Low Threshold Voltage V(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices 120 mW @ -4.5 V -20 V 144 mW @ -2.5 V -950 mA Applications 195 mW @ -1.8 V Load/Power Switches P-Channel MOSFET Battery Man... See More ⇒

5.1. Size:96K onsemi
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NTZS3151P Small Signal MOSFET -20 V, -950 mA, P-Channel SOT-563 Features Low RDS(on) Improving System Efficiency http //onsemi.com Low Threshold Voltage V(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 120 mW @ -4.5 V Compliant -20 V 144 mW @ -2.5 V -950 mA 195 mW @ -1.8 V Applications P-Channel MO... See More ⇒

Detailed specifications: NTTFS5811NLTAG, NTTFS5820NLTAG, NTTFS5826NLTAG, NTTS2P02R2, NTTS2P03R2, NTY100N10, NTZD3154NT1G, NTZD3155CT1G, IRFZ48N, 3SK290, AO4400, BUZ48, CEP6030L, CEB6030L, ECX10N20, FHP1906A, FIR5N60FG