All MOSFET. NTZS3151PT1G Datasheet

 

NTZS3151PT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTZS3151PT1G
   Marking Code: TX
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.86 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.6 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm
   Package: SOT-563

 NTZS3151PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTZS3151PT1G Datasheet (PDF)

 ..1. Size:130K  onsemi
 ntzs3151p ntzs3151pt1g.pdf

NTZS3151PT1G NTZS3151PT1G

NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices 120 mW @ -4.5 V-20 V 144 mW @ -2.5 V -950 mAApplications195 mW @ -1.8 V Load/Power SwitchesP-Channel MOSFET Battery Man

 5.1. Size:96K  onsemi
 ntzs3151p.pdf

NTZS3151PT1G NTZS3151PT1G

NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 120 mW @ -4.5 VCompliant -20 V 144 mW @ -2.5 V -950 mA195 mW @ -1.8 VApplicationsP-Channel MO

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History: BRCS080N04ZB | BRCS030N10SHBD | IRFB61N15D

 

 
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