All MOSFET. NTZS3151PT1G Datasheet

 

NTZS3151PT1G Datasheet and Replacement


   Type Designator: NTZS3151PT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.86 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm
   Package: SOT-563
 

 NTZS3151PT1G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTZS3151PT1G Datasheet (PDF)

 ..1. Size:130K  onsemi
 ntzs3151p ntzs3151pt1g.pdf pdf_icon

NTZS3151PT1G

NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices 120 mW @ -4.5 V-20 V 144 mW @ -2.5 V -950 mAApplications195 mW @ -1.8 V Load/Power SwitchesP-Channel MOSFET Battery Man

 5.1. Size:96K  onsemi
 ntzs3151p.pdf pdf_icon

NTZS3151PT1G

NTZS3151PSmall Signal MOSFET-20 V, -950 mA, P-Channel SOT-563Features Low RDS(on) Improving System Efficiency http://onsemi.com Low Threshold VoltageV(BR)DSS RDS(on) Typ ID Max Small Footprint 1.6 x 1.6 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 120 mW @ -4.5 VCompliant -20 V 144 mW @ -2.5 V -950 mA195 mW @ -1.8 VApplicationsP-Channel MO

Datasheet: NTTFS5811NLTAG , NTTFS5820NLTAG , NTTFS5826NLTAG , NTTS2P02R2 , NTTS2P03R2 , NTY100N10 , NTZD3154NT1G , NTZD3155CT1G , RU7088R , 3SK290 , AO4400 , BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , FIR5N60FG .

History: KHB9D0N90NA | WMN06N80M3 | IRFU7740 | RU8590S | SST65R1K2S2E | IRF7756G | STL100N6LF6

Keywords - NTZS3151PT1G MOSFET datasheet

 NTZS3151PT1G cross reference
 NTZS3151PT1G equivalent finder
 NTZS3151PT1G lookup
 NTZS3151PT1G substitution
 NTZS3151PT1G replacement

 

 
Back to Top

 


 
.