ECX10N20 Datasheet and Replacement

   Type Designator: ECX10N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 100 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.43 Ohm
   Package: TO247
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