All MOSFET. ECX10N20 Datasheet

 

ECX10N20 Datasheet and Replacement


   Type Designator: ECX10N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 100 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.43 Ohm
   Package: TO247
 

 ECX10N20 substitution

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ECX10N20 Datasheet (PDF)

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ECX10N20

ECX10N20N CHANNEL LATERAL MOSFETN Channel Lateral MosfetDesigned specifically for linear audio amplifier applicationsHigh-speed for high bandwidth amplifiersReduced Vds satHigh voltage rating - 200VTO-247 plastic packageEnhanced oscillation suppression in multi-device applicationsComplementary P-channel available ECX10P20(T = 25C unless otherwise stated)ABSOLUTE MAXI

Datasheet: NTZD3154NT1G , NTZD3155CT1G , NTZS3151PT1G , 3SK290 , AO4400 , BUZ48 , CEP6030L , CEB6030L , HY1906P , FHP1906A , FIR5N60FG , FNK30H150 , GPT09N50 , GPT09N50D , HY1707P , HY1707M , HY1707B .

History: 2N7002X | SI3499DV | IRFIZ34GPBF | NTZS3151PT1G | LSE65R180GF | ZXMC3AMC

Keywords - ECX10N20 MOSFET datasheet

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