ECX10N20 PDF and Equivalents Search

 

ECX10N20 Specs and Replacement

Type Designator: ECX10N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 100 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.43 Ohm

Package: TO247

ECX10N20 substitution

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ECX10N20 datasheet

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 ecx10n20.pdf pdf_icon

ECX10N20

ECX10N20 N CHANNEL LATERAL MOSFET N Channel Lateral Mosfet Designed specifically for linear audio amplifier applications High-speed for high bandwidth amplifiers Reduced Vds sat High voltage rating - 200V TO-247 plastic package Enhanced oscillation suppression in multi-device applications Complementary P-channel available ECX10P20 (T = 25 C unless otherwise stated) ABSOLUTE MAXI... See More ⇒

Detailed specifications: NTZD3154NT1G, NTZD3155CT1G, NTZS3151PT1G, 3SK290, AO4400, BUZ48, CEP6030L, CEB6030L, AON7403, FHP1906A, FIR5N60FG, FNK30H150, GPT09N50, GPT09N50D, HY1707P, HY1707M, HY1707B

Keywords - ECX10N20 MOSFET specs

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