GPT09N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: GPT09N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.4 nC
trⓘ - Rise Time: 27.2 nS
Cossⓘ - Output Capacitance: 107.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
GPT09N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GPT09N50 Datasheet (PDF)
0.1. Size:292K champion
gpt09n50-d-g.pdf
gpt09n50-d-g.pdf
GPT09N50 GPT09N50DPOWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is des
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SIHP8N50D
