All MOSFET. GPT09N50 Datasheet

 

GPT09N50 Datasheet and Replacement


   Type Designator: GPT09N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.2 nS
   Cossⓘ - Output Capacitance: 107.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220
 

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GPT09N50 Datasheet (PDF)

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GPT09N50

GPT09N50 GPT09N50DPOWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is des

Datasheet: AO4400 , BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , FIR5N60FG , FNK30H150 , 2N7002 , GPT09N50D , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM .

History: IRFHM830DPBF | IRFHM831PBF

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