GPT09N50 Specs and Replacement
Type Designator: GPT09N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.2 nS
Cossⓘ - Output Capacitance: 107.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
GPT09N50 substitution
- MOSFET ⓘ Cross-Reference Search
GPT09N50 datasheet
gpt09n50-d-g.pdf
GPT09N50 GPT09N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is des... See More ⇒
Detailed specifications: AO4400, BUZ48, CEP6030L, CEB6030L, ECX10N20, FHP1906A, FIR5N60FG, FNK30H150, MMIS60R580P, GPT09N50D, HY1707P, HY1707M, HY1707B, HY1707I, HY1707MF, HY1707PS, HY1707PM
Keywords - GPT09N50 MOSFET specs
GPT09N50 cross reference
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GPT09N50 substitution
GPT09N50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: S10H12R | HY1707P
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