LTP70N06 PDF and Equivalents Search

 

LTP70N06 Specs and Replacement

Type Designator: LTP70N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 154 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO220

LTP70N06 substitution

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LTP70N06 datasheet

 ..1. Size:590K  liteon
 ltp70n06.pdf pdf_icon

LTP70N06

LTP70N06 N-Channel 60V Power MOSFET Features Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m , DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit ... See More ⇒

 0.1. Size:743K  1
 ltp70n06p.pdf pdf_icon

LTP70N06

LTP70N06P N-Channel 60V Power MOSFET Features Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 11.5 m , DC-DC converter and DC motor control Typ = 9 m UPS ID = 80 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit ... See More ⇒

Detailed specifications: GPT09N50D , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , IRF740 , ME7170-G , TP0610T , WML07N65C2 , WMM07N65C2 , WMO07N65C2 , WMP07N65C2 , WMG07N65C2 , WMH07N65C2 .

History: 3SK70

Keywords - LTP70N06 MOSFET specs

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