All MOSFET. LTP70N06 Datasheet

 

LTP70N06 Datasheet and Replacement


   Type Designator: LTP70N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 154 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
 

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LTP70N06 Datasheet (PDF)

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LTP70N06

LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m, DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

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LTP70N06

LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 11.5 m, DC-DC converter and DC motor control Typ = 9 m UPS ID = 80 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

Datasheet: GPT09N50D , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , IRF740 , ME7170-G , TP0610T , WML07N65C2 , WMM07N65C2 , WMO07N65C2 , WMP07N65C2 , WMG07N65C2 , WMH07N65C2 .

History: MDQ18N50GTP

Keywords - LTP70N06 MOSFET datasheet

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