3N173 Datasheet and Replacement
Type Designator: 3N173
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 350 Ohm
Package: TO-72
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3N173 Datasheet (PDF)
3n172 3n173.pdf

Diode Protected P-ChannelEnhancement Mode MOSFETLLCGeneral Purpose Amplifier/Switch3N172 / 3N173FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A High Input Impedance Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . .
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: RJK0331DPB-00
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History: RJK0331DPB-00



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