3N173 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3N173
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 350 Ohm
Package: TO-72
3N173 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N173 Datasheet (PDF)
3n172 3n173.pdf
Diode Protected P-ChannelEnhancement Mode MOSFETLLCGeneral Purpose Amplifier/Switch3N172 / 3N173FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A High Input Impedance Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . .
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 3N175
History: 3N175
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918