3N173 Specs and Replacement

Type Designator: 3N173

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 350 Ohm

Package: TO-72

3N173 substitution

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3N173 datasheet

 ..1. Size:30K  calogic
 3n172 3n173.pdf pdf_icon

3N173

Diode Protected P-Channel Enhancement Mode MOSFET LLC General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise specified) A High Input Impedance Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . . ... See More ⇒

Detailed specifications: WMM07N65C2, WMO07N65C2, WMP07N65C2, WMG07N65C2, WMH07N65C2, 3N155, 3N156, 3N172, IRF640N, 3N188, 3N189, 3N60AF, 3N60F, 3N60G, 3N80A, 3N80AF, 3SK195

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