All MOSFET. 3N173 Datasheet

 

3N173 Datasheet and Replacement


   Type Designator: 3N173
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 350 Ohm
   Package: TO-72
 

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3N173 Datasheet (PDF)

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3N173

Diode Protected P-ChannelEnhancement Mode MOSFETLLCGeneral Purpose Amplifier/Switch3N172 / 3N173FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A High Input Impedance Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . .

Datasheet: WMM07N65C2 , WMO07N65C2 , WMP07N65C2 , WMG07N65C2 , WMH07N65C2 , 3N155 , 3N156 , 3N172 , IRF640N , 3N188 , 3N189 , 3N60AF , 3N60F , 3N60G , 3N80A , 3N80AF , 3SK195 .

History: NCE1216 | 2N7002VGP

Keywords - 3N173 MOSFET datasheet

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