All MOSFET. 3N60G Datasheet

 

3N60G Datasheet and Replacement


   Type Designator: 3N60G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: TO-252
 

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3N60G Datasheet (PDF)

 ..1. Size:415K  nell
 3n60af 3n60f 3n60g.pdf pdf_icon

3N60G

RoHS 3N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(3A, 600Volts)DESCRIPTIOND The Nell 3N60 is a three-terminal silicon Ddevice with current conduction capabilityof 3A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

Datasheet: 3N155 , 3N156 , 3N172 , 3N173 , 3N188 , 3N189 , 3N60AF , 3N60F , IRFB4227 , 3N80A , 3N80AF , 3SK195 , 3SK263 , 3SK264 , 3SK295 , 3SK296 , 3SK297 .

History: CRJD390N65GC | TPC8029 | R6009ENJ

Keywords - 3N60G MOSFET datasheet

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