3N60G Specs and Replacement

Type Designator: 3N60G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: TO-252

3N60G substitution

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3N60G datasheet

 ..1. Size:415K  nell
 3n60af 3n60f 3n60g.pdf pdf_icon

3N60G

RoHS 3N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION D The Nell 3N60 is a three-terminal silicon D device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such ... See More ⇒

Detailed specifications: 3N155, 3N156, 3N172, 3N173, 3N188, 3N189, 3N60AF, 3N60F, 10N60, 3N80A, 3N80AF, 3SK195, 3SK263, 3SK264, 3SK295, 3SK296, 3SK297

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.