3N60G Datasheet and Replacement
Type Designator: 3N60G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO-252
3N60G substitution
3N60G Datasheet (PDF)
3n60af 3n60f 3n60g.pdf

RoHS 3N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(3A, 600Volts)DESCRIPTIOND The Nell 3N60 is a three-terminal silicon Ddevice with current conduction capabilityof 3A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such
Datasheet: 3N155 , 3N156 , 3N172 , 3N173 , 3N188 , 3N189 , 3N60AF , 3N60F , IRFB4227 , 3N80A , 3N80AF , 3SK195 , 3SK263 , 3SK264 , 3SK295 , 3SK296 , 3SK297 .
History: KF9N25P | IRFB52N15D | AONS36306 | SSF3615 | SWD5N65K | 2SK1018 | INK0001AM1
Keywords - 3N60G MOSFET datasheet
3N60G cross reference
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History: KF9N25P | IRFB52N15D | AONS36306 | SSF3615 | SWD5N65K | 2SK1018 | INK0001AM1



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