3SK195 Specs and Replacement

Type Designator: 3SK195

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 14 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 75 Ohm

Package: SOT-143

3SK195 substitution

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3SK195 datasheet

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3SK195

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3SK195

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten... See More ⇒

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3SK195

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3SK195

3SK194 Silicon N-Channel Dual Gate MOS FET Application VHF/UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 1. Source 4 2. Gate1 3. Gate2 4. Drain 3SK194 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 15 V Gate 1 to source voltage VG1S 10 V Gate 2 to source voltage VG2S 10 V Drain current ID 35 mA Channel power dissipation Pc... See More ⇒

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Detailed specifications: 3N173, 3N188, 3N189, 3N60AF, 3N60F, 3N60G, 3N80A, 3N80AF, 2N7000, 3SK263, 3SK264, 3SK295, 3SK296, 3SK297, 3SK298, 3SK299, 3SK300

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