3SK195
MOSFET. Datasheet pdf. Equivalent
Type Designator: 3SK195
Marking Code: UJ
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 14
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Id|ⓘ - Maximum Drain Current: 0.03
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 75
Ohm
Package:
SOT-143
3SK195
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3SK195
Datasheet (PDF)
9.1. Size:599K 1
3sk192p 3sk192q.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
9.3. Size:41K 1
3sk194.pdf
3SK194Silicon N-Channel Dual Gate MOS FETApplicationVHF/UHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK194Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 15 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pc
9.4. Size:181K toshiba
3sk199.pdf
3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13
Datasheet: WPB4002
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