4AK17 Specs and Replacement

Type Designator: 4AK17

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SP-10

4AK17 substitution

- MOSFET ⓘ Cross-Reference Search

 

4AK17 datasheet

 ..1. Size:51K  hitachi
 4ak17.pdf pdf_icon

4AK17

4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance RDS(on) 0.045 , VGS = 10 V, ID = 10 A RDS(on) 0.065 , VGS = 4 V, ID = 10 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver, solenoid driver and lamp driver 4AK17 Outline SP-1... See More ⇒

Detailed specifications: 3SK298, 3SK299, 3SK300, 3SK317, 3SK319, 3SK323, MSAFX40N30A, 40P03, AO3401, 4N60A, 4N60AF, 4N60G, 4N80A, 4N80AF, 50N02, 50N06A, 50N06AF

Keywords - 4AK17 MOSFET specs

 4AK17 cross reference

 4AK17 equivalent finder

 4AK17 pdf lookup

 4AK17 substitution

 4AK17 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.