5HB03N8 Specs and Replacement

Type Designator: 5HB03N8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.98 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO-8

5HB03N8 substitution

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5HB03N8 datasheet

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5HB03N8

5HB03N8 5HB03N8 5HB03N8 5HB03N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge 30V SO8 Complementary enhancement mode MOSFET H-Bridge 30V SO8 Complementary enhancement mode MOSFET H-Bridge 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Summary Summary Summary ID ID ID ID Device V(BR)DSS QG RDS(on) Device V(BR)DSS QG RDS(on) Device V(BR)DSS QG RDS(on) D... See More ⇒

Detailed specifications: 4N80AF, 50N02, 50N06A, 50N06AF, 50N06F, 50N06G, MSAFX50N20A, 50N30C, AON6380, 5N20V, 5N60A, 5N60AF, 5N60G, 5N65A, 5N65AF, 5N65F, 5N65G

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs