All MOSFET. 5HB03N8 Datasheet

 

5HB03N8 Datasheet and Replacement


   Type Designator: 5HB03N8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.98 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8
 

 5HB03N8 substitution

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5HB03N8 Datasheet (PDF)

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5HB03N8

5HB03N85HB03N85HB03N85HB03N830V SO8 Complementary enhancement mode MOSFET H-Bridge30V SO8 Complementary enhancement mode MOSFET H-Bridge30V SO8 Complementary enhancement mode MOSFET H-Bridge30V SO8 Complementary enhancement mode MOSFET H-BridgeSummarySummarySummarySummaryIDIDIDIDDevice V(BR)DSS QG RDS(on)Device V(BR)DSS QG RDS(on)Device V(BR)DSS QG RDS(on)D

Datasheet: 4N80AF , 50N02 , 50N06A , 50N06AF , 50N06F , 50N06G , MSAFX50N20A , 50N30C , IRLZ44N , 5N20V , 5N60A , 5N60AF , 5N60G , 5N65A , 5N65AF , 5N65F , 5N65G .

History: NP80N055ELE | CS1N60D | R6030KNZ | MMBF5459 | 50N06AF | 5N65A | NCEP02515F

Keywords - 5HB03N8 MOSFET datasheet

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