5N20V Specs and Replacement

Type Designator: 5N20V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TSSOP-8

5N20V substitution

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5N20V datasheet

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 5n20v.pdf pdf_icon

5N20V

SMD Type Transistors SMD Type sistIC SMD Type anDiodes SMD Type MOSFET SMD Type TrMOSFETs SMD Type or SMD Type IC Product specification 5N20V TSSOP-8 Unit mm Features Typical RDS(on)=0.03 @ 4.5V Typical RDS(on)=0.037 @ 2.7V Ultra Low Threshold Standard Outline For Esay Automated Surface Mount Assembly Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source ... See More ⇒

Detailed specifications: 50N02, 50N06A, 50N06AF, 50N06F, 50N06G, MSAFX50N20A, 50N30C, 5HB03N8, IRF530, 5N60A, 5N60AF, 5N60G, 5N65A, 5N65AF, 5N65F, 5N65G, 5N90A

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