5N20V Datasheet and Replacement
Type Designator: 5N20V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TSSOP-8
5N20V substitution
5N20V Datasheet (PDF)
5n20v.pdf

SMD Type TransistorsSMD Type sistICSMD Type anDiodesSMD Type MOSFETSMD Type TrMOSFETsSMD Type orSMD Type ICProduct specification5N20VTSSOP-8Unit: mmFeaturesTypical RDS(on)=0.03 @ 4.5VTypical RDS(on)=0.037 @ 2.7VUltra Low ThresholdStandard Outline For Esay Automated Surface Mount AssemblyAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-source
Datasheet: 50N02 , 50N06A , 50N06AF , 50N06F , 50N06G , MSAFX50N20A , 50N30C , 5HB03N8 , AO4407 , 5N60A , 5N60AF , 5N60G , 5N65A , 5N65AF , 5N65F , 5N65G , 5N90A .
History: SFF7N60 | IRF3706L | SI2319DS | SFB063N80AC3 | CS4N65A3TDY | NCE65T540 | 2SK1488
Keywords - 5N20V MOSFET datasheet
5N20V cross reference
5N20V equivalent finder
5N20V lookup
5N20V substitution
5N20V replacement
History: SFF7N60 | IRF3706L | SI2319DS | SFB063N80AC3 | CS4N65A3TDY | NCE65T540 | 2SK1488



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