6HP04CH Datasheet and Replacement
Type Designator: 6HP04CH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15.2 nS
Cossⓘ - Output Capacitance: 8.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: SOT-23
6HP04CH substitution
6HP04CH Datasheet (PDF)
6hp04ch.pdf

Ordering number : ENA1039A6HP04CHP-Channel Small Single MOSFEThttp://onsemi.com 60V, 370mA, 4.2 , Single CPH3Features 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --60 VGate to Source Voltage VGSS 20 VDrain Current (DC)
6hp04mh.pdf

Ordering number : ENA0368A6HP04MHP-Channel Small Single MOSFEThttp://onsemi.com 60V, 370mA, 4.2 Single MCPH3Features 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --60 VGate to Source Voltage VGSS 20 VDrain Current (DC) I
Datasheet: 5N65AF , 5N65F , 5N65G , 5N90A , 5N90AF , 65N06A , 65N06H , 6680A , STP80NF70 , 6HP04MH , 6LN04SS , 6N60A , 6N60AF , 6N60F , 6N60G , 6N80A , 6N80AF .
History: B80N06 | IXTQ110N10P | NVTFS6H854NL | TPC8024-H | HMS8N60 | WMB240P10HG4 | TPC8062-H
Keywords - 6HP04CH MOSFET datasheet
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History: B80N06 | IXTQ110N10P | NVTFS6H854NL | TPC8024-H | HMS8N60 | WMB240P10HG4 | TPC8062-H



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