6LN04SS MOSFET. Datasheet pdf. Equivalent
Type Designator: 6LN04SS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 5.9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
Package: SOT-416
6LN04SS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6LN04SS Datasheet (PDF)
..1. Size:49K sanyo
6ln04ss.pdf
6ln04ss.pdf
Ordering number : ENA09406LN04SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device6LN04SSApplicationsFeatures 1.5V drive. Halogen Free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) I
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