6LN04SS Specs and Replacement

Type Designator: 6LN04SS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 5.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: SOT-416

6LN04SS substitution

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6LN04SS datasheet

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6LN04SS

Ordering number ENA0940 6LN04SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 6LN04SS Applications Features 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) I... See More ⇒

Detailed specifications: 5N65G, 5N90A, 5N90AF, 65N06A, 65N06H, 6680A, 6HP04CH, 6HP04MH, RFP50N06, 6N60A, 6N60AF, 6N60F, 6N60G, 6N80A, 6N80AF, 6N90A, 6N90AF

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