All MOSFET. 6LN04SS Datasheet

 

6LN04SS Datasheet and Replacement


   Type Designator: 6LN04SS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 5.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: SOT-416
 

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6LN04SS Datasheet (PDF)

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6LN04SS

Ordering number : ENA09406LN04SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device6LN04SSApplicationsFeatures 1.5V drive. Halogen Free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) I

Datasheet: 5N65G , 5N90A , 5N90AF , 65N06A , 65N06H , 6680A , 6HP04CH , 6HP04MH , SKD502T , 6N60A , 6N60AF , 6N60F , 6N60G , 6N80A , 6N80AF , 6N90A , 6N90AF .

History: IRFIZ14G | 2N7091 | KCB3008A | SL9435A | GSM4599W | PSMN003-30P | FQP7N80

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