6LN04SS Datasheet and Replacement
Type Designator: 6LN04SS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 5.9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
Package: SOT-416
6LN04SS substitution
6LN04SS Datasheet (PDF)
6ln04ss.pdf
Ordering number : ENA09406LN04SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device6LN04SSApplicationsFeatures 1.5V drive. Halogen Free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) I
Datasheet: 5N65G , 5N90A , 5N90AF , 65N06A , 65N06H , 6680A , 6HP04CH , 6HP04MH , RFP50N06 , 6N60A , 6N60AF , 6N60F , 6N60G , 6N80A , 6N80AF , 6N90A , 6N90AF .
Keywords - 6LN04SS MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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