6N90A Datasheet and Replacement
Type Designator: 6N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-220AB
6N90A Datasheet (PDF)
6n90a 6n90af.pdf

RoHS 6N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET6A, 900VoltsDESCRIPTIOND The Nell 6N90 is a three-terminal silicon devicewith current conduction capability of 6A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GDS G
ssh6n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
sss6n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
Datasheet: 6HP04MH , 6LN04SS , 6N60A , 6N60AF , 6N60F , 6N60G , 6N80A , 6N80AF , IRF2807 , 6N90AF , 75N08 , 75N10A , 75N10B , MSAFA75N10C , MSAFX76N07A , 7N60AF , 7N60H .
History: NDS356P | STB200NF04T4
Keywords - 6N90A MOSFET datasheet
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6N90A equivalent finder
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History: NDS356P | STB200NF04T4



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