All MOSFET. 6N90A Datasheet

 

6N90A Datasheet and Replacement


   Type Designator: 6N90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220AB
 

 6N90A substitution

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6N90A Datasheet (PDF)

 ..1. Size:378K  nell
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6N90A

RoHS 6N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET6A, 900VoltsDESCRIPTIOND The Nell 6N90 is a three-terminal silicon devicewith current conduction capability of 6A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GDS G

 0.1. Size:206K  1
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6N90A

 0.2. Size:946K  samsung
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6N90A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 0.3. Size:506K  samsung
sss6n90a.pdf pdf_icon

6N90A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: 6HP04MH , 6LN04SS , 6N60A , 6N60AF , 6N60F , 6N60G , 6N80A , 6N80AF , IRF2807 , 6N90AF , 75N08 , 75N10A , 75N10B , MSAFA75N10C , MSAFX76N07A , 7N60AF , 7N60H .

History: CRTD110N03L | SSP65R090S2

Keywords - 6N90A MOSFET datasheet

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