All MOSFET. MSAFA75N10C Datasheet

 

MSAFA75N10C MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSAFA75N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: COOLPACK2

 MSAFA75N10C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSAFA75N10C Datasheet (PDF)

 ..1. Size:82K  microsemi
 msafa75n10c.pdf

MSAFA75N10C MSAFA75N10C

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE SANTA ANA DIVISIONPOWER MOSFET PRODUCT PREVIEW KEY FEATURES KEY FEATURES KEY FEATURESKEY FEATURESDESCRIPTION Ultrafast body diode New generation N-channel enhancement mode power MOSFET with Increased Unclamped rugged polysilicon gate structure and fast switching intrinsic rectifier. The Inductive Switching (UIS) very

 9.1. Size:54K  microsemi
 msafa1n100d.pdf

MSAFA75N10C MSAFA75N10C

2830 S. Fairview StreetSanta Ana, CA 92704Phone: (714) 979-8220MSAFA1N100DFax: (714) 559-5989Fast MOSFET Die forImplantable Cardio DefibrillatorApplicationsDESCRIPTION: N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti N

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP9565AGJ

 

 
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