All MOSFET. MSAFA75N10C Datasheet

 

MSAFA75N10C Datasheet and Replacement


   Type Designator: MSAFA75N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: COOLPACK2
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MSAFA75N10C Datasheet (PDF)

 ..1. Size:82K  microsemi
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MSAFA75N10C

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE SANTA ANA DIVISIONPOWER MOSFET PRODUCT PREVIEW KEY FEATURES KEY FEATURES KEY FEATURESKEY FEATURESDESCRIPTION Ultrafast body diode New generation N-channel enhancement mode power MOSFET with Increased Unclamped rugged polysilicon gate structure and fast switching intrinsic rectifier. The Inductive Switching (UIS) very

 9.1. Size:54K  microsemi
 msafa1n100d.pdf pdf_icon

MSAFA75N10C

2830 S. Fairview StreetSanta Ana, CA 92704Phone: (714) 979-8220MSAFA1N100DFax: (714) 559-5989Fast MOSFET Die forImplantable Cardio DefibrillatorApplicationsDESCRIPTION: N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti N

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: HSS2319 | IXFR80N60P3 | CS12N06AE-G | NTP30N06 | HM4421C | SSM3J307T | SI2325DS

Keywords - MSAFA75N10C MOSFET datasheet

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