MSAFA75N10C Specs and Replacement

Type Designator: MSAFA75N10C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: COOLPACK2

MSAFA75N10C substitution

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MSAFA75N10C datasheet

 ..1. Size:82K  microsemi
 msafa75n10c.pdf pdf_icon

MSAFA75N10C

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE SANTA ANA DIVISION POWER MOSFET PRODUCT PREVIEW KEY FEATURES KEY FEATURES KEY FEATURES KEY FEATURES DESCRIPTION Ultrafast body diode New generation N-channel enhancement mode power MOSFET with Increased Unclamped rugged polysilicon gate structure and fast switching intrinsic rectifier. The Inductive Switching (UIS) very ... See More ⇒

 9.1. Size:54K  microsemi
 msafa1n100d.pdf pdf_icon

MSAFA75N10C

2830 S. Fairview Street Santa Ana, CA 92704 Phone (714) 979-8220 MSAFA1N100D Fax (714) 559-5989 Fast MOSFET Die for Implantable Cardio Defibrillator Applications DESCRIPTION N-Channel enhancement mode high density MOSFET die Passivation oxynitride, 4um Frontside (top) Metallization Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization Ti N... See More ⇒

Detailed specifications: 6N60G, 6N80A, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B, 75N75, MSAFX76N07A, 7N60AF, 7N60H, 7N90A, 7N90AF, 8N60H, 8N80A, 8N80AF

Keywords - MSAFA75N10C MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs