All MOSFET. MSAFA75N10C Datasheet

 

MSAFA75N10C Datasheet and Replacement


   Type Designator: MSAFA75N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: COOLPACK2
 

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MSAFA75N10C Datasheet (PDF)

 ..1. Size:82K  microsemi
 msafa75n10c.pdf pdf_icon

MSAFA75N10C

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE SANTA ANA DIVISIONPOWER MOSFET PRODUCT PREVIEW KEY FEATURES KEY FEATURES KEY FEATURESKEY FEATURESDESCRIPTION Ultrafast body diode New generation N-channel enhancement mode power MOSFET with Increased Unclamped rugged polysilicon gate structure and fast switching intrinsic rectifier. The Inductive Switching (UIS) very

 9.1. Size:54K  microsemi
 msafa1n100d.pdf pdf_icon

MSAFA75N10C

2830 S. Fairview StreetSanta Ana, CA 92704Phone: (714) 979-8220MSAFA1N100DFax: (714) 559-5989Fast MOSFET Die forImplantable Cardio DefibrillatorApplicationsDESCRIPTION: N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti N

Datasheet: 6N60G , 6N80A , 6N80AF , 6N90A , 6N90AF , 75N08 , 75N10A , 75N10B , IRF520 , MSAFX76N07A , 7N60AF , 7N60H , 7N90A , 7N90AF , 8N60H , 8N80A , 8N80AF .

History: R6009ENJ | CRJD390N65GC | TPC8029

Keywords - MSAFA75N10C MOSFET datasheet

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