All MOSFET. 8N80B Datasheet

 

8N80B Datasheet and Replacement


   Type Designator: 8N80B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO-3PB
 

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8N80B Datasheet (PDF)

 ..1. Size:439K  nell
 8n80a 8n80af 8n80b.pdf pdf_icon

8N80B

RoHS 8N80 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(8A, 800Volts)DESCRIPTION The Nell 8N80 is a three-terminal silicon device with current conduction capability of 8A,fast switching speed, low on-state resistance,Dbreakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. suchas sw

 0.1. Size:3382K  goford
 g8n80bf.pdf pdf_icon

8N80B

GOFORDG8N80BFTO-220FPage 1HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORDG8N80BFPage 2HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORDG8N80BFPage 3HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORDG8N80BFPage 4HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORD

 0.2. Size:1019K  feihonltd
 fhf8n80b.pdf pdf_icon

8N80B

N N-CHANNEL MOSFET FHF8N80B MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 800V Crss ( 14pF) Low Crss (typical 14pF ) Rdson-typ @Vgs=10V 1.25 Fast switching Qg-typ 49nC 100% 100% avalanche tested dv/dt Improved dv/dt

Datasheet: MSAFX76N07A , 7N60AF , 7N60H , 7N90A , 7N90AF , 8N60H , 8N80A , 8N80AF , IRLB3034 , MSAEX8P50A , NID9N05ACL , 9N25A , 9N25AF , 9N90B , 9N90C , AMA2N7002 , AMA410N .

History: BLP042N15J-B | FQPF50N06 | DH1K1N10F | AOK065A60FD | BLP039N08-P | 9N25AF | BLP05N08G-B

Keywords - 8N80B MOSFET datasheet

 8N80B cross reference
 8N80B equivalent finder
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 8N80B replacement

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