8N80B Specs and Replacement
Type Designator: 8N80B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
Package: TO-3PB
8N80B substitution
- MOSFET ⓘ Cross-Reference Search
8N80B datasheet
8n80a 8n80af 8n80b.pdf
RoHS 8N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (8A, 800Volts) DESCRIPTION The Nell 8N80 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw... See More ⇒
g8n80bf.pdf
GOFORD G8N80BF TO-220F Page 1 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 2 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 3 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 4 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD ... See More ⇒
fhf8n80b.pdf
N N-CHANNEL MOSFET FHF8N80B MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 800V Crss ( 14pF) Low Crss (typical 14pF ) Rdson-typ @Vgs=10V 1.25 Fast switching Qg-typ 49nC 100% 100% avalanche tested dv/dt Improved dv/dt ... See More ⇒
Detailed specifications: MSAFX76N07A, 7N60AF, 7N60H, 7N90A, 7N90AF, 8N60H, 8N80A, 8N80AF, IRLB3034, MSAEX8P50A, NID9N05ACL, 9N25A, 9N25AF, 9N90B, 9N90C, AMA2N7002, AMA410N
Keywords - 8N80B MOSFET specs
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